X-On Electronics has gained recognition as a prominent supplier of SZESD7462N2T5G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SZESD7462N2T5G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SZESD7462N2T5G ON Semiconductor

SZESD7462N2T5G electronic component of ON Semiconductor
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Part No.SZESD7462N2T5G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 16V ESD PROTECTION
Datasheet: SZESD7462N2T5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.368 ea
Line Total: USD 0.37 
Availability - 22963
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3309
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.371
10 : USD 0.2436
25 : USD 0.2359
100 : USD 0.1344
250 : USD 0.1331
500 : USD 0.1317
1000 : USD 0.1144
3000 : USD 0.0884

145
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 5
Multiples : 5
5 : USD 0.1288
50 : USD 0.1262
150 : USD 0.1245
500 : USD 0.1227

22963
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.368
10 : USD 0.2461
100 : USD 0.1277
1000 : USD 0.1046
2500 : USD 0.1012
8000 : USD 0.0874
24000 : USD 0.084

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SZESD7462N2T5G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SZESD7462N2T5G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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ESD Protection Diode UltraLow Capacitance MicroPackaged Diodes for ESD Protection ESD7462, SZESD7462 The ESD7462 is designed to protect voltage sensitive components that require ultralow capacitance from ESD and transient voltage events. It has industry leading capacitance linearity over voltage www.onsemi.com making it ideal for RF applications. This capacitance linearity combined with the extremely small package and low insertion loss makes this part well suited for use in antenna line applications for wireless handsets and terminals. Features Industry Leading Capacitance Linearity Over Voltage UltraLow Capacitance: 0.3 pF Typ MARKING Insertion Loss: 0.05 dB at 1 GHz 0.10 dB at 3 GHz DIAGRAM Low Leakage: < 1 nA Typ X2DFN2 Protection for the following IEC Standards: 4 M CASE 714AB IEC6100042 (ESD): Level 4 IEC6100044 (EFT): 40 A 5/50 ns 4 = Specific Device Code IEC6100045 (Lightning): 1 A (8/20 s) M = Date Code Protection for ISO 10605 (ESD) SZESD7462MXWT5G Wettable Flank Package for Optimal X2DFNW2 Automated Optical Inspection (AOI) E M CASE 711BG SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and E = Specific Device Code PPAP Capable M = Date Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications ORDERING INFORMATION RF Signal ESD Protection Device Package Shipping RF Switching, PA, and Antenna ESD Protection Near Field Communications ESD7462N2T5G X2DFN2 8000 / Tape & (PbFree) Reel USB 2.0, USB 3.0 SZESD7462N2T5G X2DFN2 8000 / Tape & MAXIMUM RATINGS (T = 25C unless otherwise noted) (PbFree) Reel A Rating Symbol Value Unit SZESD7462MXWT5G X2DFNW2 8000 / Tape & (PbFree) Reel IEC 6100042 Contact (Note 1) ESD 18 kV IEC 6100042 Air 18 For information on tape and reel specifications, ISO 10605 Contact (330 pF / 330 ) 13 including part orientation and tape sizes, please ISO 10605 Contact (330 pF / 2 k ) 29 refer to our Tape and Reel Packaging Specifications ISO 10605 Contact (150 pF / 2 k ) 30 Brochure, BRD8011/D. Total Power Dissipation (Note 2) T = 25C P 300 mW A D Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 55 to C J stg +150 Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse at T = 25C, per IEC6100042 waveform. A 2. Mounted with recommended minimum pad size, DC board FR4 Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2020 Rev. 4 ESD7462/DESD7462, SZESD7462 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Symbol Condition Min Typ Max Unit Reverse Working Voltage V 16 V RWM Breakdown Voltage V I = 1 mA (Note 3) 16.5 22 28 V BR T Reverse Leakage Current I V = 5 V 100 nA R RWM Clamping Voltage V IEC 6100042, 8 kV Contact See Figures 1 and 2 V C Clamping Voltage, TLP (Note 4) V I = 8 A 34 V C PP I = 16 A 47 PP Dynamic Resistance R TLP Pulse 1.6 DYN Junction Capacitance C V = 0 V, f = 1 MHz 0.30 0.55 pF J R V = 0 V, f = 1 GHz 0.25 0.55 R Insertion Loss f = 1 GHz 0.05 dB f = 3 GHz 0.10 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 4. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 180 20 160 0 140 20 120 40 100 60 80 80 60 100 40 120 20 140 0 20 160 25 0 25 50 75 100 125 150 175 25 0 25 50 75 100 125 150 175 TIME (ns) TIME (ns) Figure 1. Typical IEC6100042 +8 kV Contact Figure 2. Typical IEC6100042 8 kV Contact ESD Clamping Voltage ESD Clamping Voltage www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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