ESD7371, SZESD7371 Series ESD Protection Diode UltraLow Capacitance The ESD7371 Series is designed to protect voltage sensitive www.onsemi.com components that require ultralow capacitance from ESD and transient voltage events. Excellent clamping capability, low MARKING capacitance, high breakdown voltage, high linearity, low leakage, and DIAGRAMS fast response time make these parts ideal for ESD protection on designs where board space is at a premium. It has industry leading 2 SOD323 AG capacitance linearity over voltage making it ideal for RF applications. CASE 477 M This capacitance linearity combined with the extremely small package 1 and low insertion loss makes this part well suited for use in antenna line applications for wireless handsets and terminals. 2 SOD523 AG Features CASE 502 12 1 Industry Leading Capacitance Linearity Over Voltage Low Capacitance (0.7 pF Max, I/O to GND) Standoff Voltage: 5.3 V SOD923 AE M Low Leakage: < 1 nA CASE 514AB Low Dynamic Resistance < 1 X, XX = Specific Device Code IEC6100042 Level 4 ESD Protection M = Date Code 1000 ESD IEC6100042 Strikes 8 kV Contact / Air Discharged SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PIN CONFIGURATION PPAP Capable AND SCHEMATIC These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications 1 2 Cathode Anode RF Signal ESD Protection RF Switching, PA, and Antenna ESD Protection Near Field Communications ORDERING INFORMATION USB 2.0, USB 3.0 See detailed ordering and shipping information in the package MAXIMUM RATINGS (T = 25C unless otherwise noted) A dimensions section on page 5 of this data sheet. Rating Symbol Value Unit IEC 6100042 (ESD) (Note 1) 20 kV IEC 6100045 (ESD) (Note 2) 3.0 A Total Power Dissipation (Note 3) T = 25C P 300 mW A D Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 55 to C J stg +150 Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse at T = 25C, per IEC6100042 waveform. A 2. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A 3. Mounted with recommended minimum pad size, DC board FR4 Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: August, 2018 Rev. 3 ESD7371/D MESD7371, SZESD7371 Series See Application Note AND8308/D for further description of survivability specs. ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 5.3 V RWM Breakdown Voltage (Note 4) V I = 1 mA 7.0 V BR T Reverse Leakage Current I V = 5.3 V < 1.0 50 nA R RWM Clamping Voltage (Note 5) V I = 1 A 11 15 V C PP Clamping Voltage (Note 5) V I = 3 A 14 20 V C PP Junction Capacitance C V = 0 V, f = 1 MHz 0.43 0.7 pF J R V = 0 V, f < 1 GHz 0.39 0.7 R Dynamic Resistance R TLP Pulse 0.45 DYN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 5. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A www.onsemi.com 2