TVS8181MUTBG ON Semiconductor

TVS8151, TVS8181 15 V and 18 V Unidirectional Transient Voltage Suppressors Features www.onsemi.com Unidirectional High Voltage ESD Protection Provides ESD Protection to IEC6100042 Level 4: 30 kV Contact Discharge IEC 6100045 (lighting) High Voltage Zener Diode Protects Supply Rail up to 100 A (8/20 s) UDFN6 These Devices are PbFree and are RoHS Compliant D4 SUFFIX CASE 517CS APPLICATION DIAGRAM Vcc (1) BLOCK DIAGRAM Cathode Anode GND (6) MARKING DIAGRAM DAP** Ax M GND (5) 1 Ax = Specific Device Code x = 5 or 8 M = Date Code = PbFree Package **Die Attach Pad on back of package (connect to ground) ORDERING INFORMATION Device Package Shipping TVS8151MUTBG UDFN6 3000/Tape & (PbFree) Reel TVS8181MUTBG UDFN6 3000/Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2016 Rev. 0 TVS8151/DTVS8151, TVS8181 PACKAGE / PINOUT DIAGRAMS Table 1. PIN DESCRIPTIONS 4Channel, 6Lead, UDFN8 Package Top View Bottom View (Pins Down View) (Pins Up View) Pin Name Type Description 12 3 4 6 5 1 V HV V HV ESD Channel CC DD 2 N/C No Connect XX M 3 N/C No Connect Pin 1 Marking 4 N/C No Connect 5 GND Ground 65 1 2 3 4 6 GND Ground 6Lead UDFN ELECTRICAL CHARACTERISTICS I Symbol Parameter I F I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM I Maximum Reverse Leakage Current V V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T V Maximum Temperature Coefficient of V BR BR I PP I Forward Current F V Forward Voltage I F F UniDirectional TVS SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units Operating Temperature Range 55 to +125 C Storage Temperature Range 65 to +150 C Peak Current (t = 8/20 s) TVS8151 100 A p Peak Current (t = 8/20 s) TVS8181 119 A p Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS V I C PP (Note 3) Breakdown Voltage (8 x 20 s) V (V) RWM V V (Note 2) I (mA) V (V) I (A) (Note 1) I V A) BR T C PP R RWM Device Marking Max Max Min Nom Max Max Device Name TVS8151 A5 15 1 16 17.5 18.5 1 27 100 TVS8181 A8 18 1 20 22.5 23.5 1 28 70 30 100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. A transient suppressor is normally selected according to the working peak reverse voltage (V ), which should be equal to or greater than RWM the DC or continuous peak operating voltage level. 2. V measured at pulse test current I at an ambient temperature of 25C. BR T 3. Surge current waveform per Figure 1. www.onsemi.com 2