X-On Electronics has gained recognition as a prominent supplier of TVS8818MUTAG ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. TVS8818MUTAG ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

TVS8818MUTAG ON Semiconductor

TVS8818MUTAG electronic component of ON Semiconductor
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See Product Specifications
Part No.TVS8818MUTAG
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 8 CHANNEL TVS ARRAY
Datasheet: TVS8818MUTAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 3.1535
10 : USD 1.0818
100 : USD 0.8254
500 : USD 0.7198
1000 : USD 0.6024
3000 : USD 0.5753
6000 : USD 0.5567
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Vf - Forward Voltage
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TVS8818MUTAG from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TVS8818MUTAG and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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TVS8814, TVS8818 Transient Voltage Suppressors Low Capacitance TVS Protection for High Speed Data www.onsemi.com The TVS8814 and TVS8818 transient voltage suppressors are designed specifically to protect 10/100 and GbE Ethernet signals from MARKING high levels of surge current. Low clamping voltage under high surge DIAGRAMS conditions make this device an ideal solution for protecting voltage 4C M sensitive lines leading to Ethernet transceiver chips. Low capacitance combined with flow-through style packaging allows for easy PCB UDFN8 layout and matched trace lengths necessary to maintain consistent CASE 506CV impedance between high-speed differential lines. The integrated 4 and 8 lines of protection in flow-thru type packages offer a simplified solution with premier performance for 10/100 and GbE Ethernet 4D M applications. UDFN10 Features CASE 506CU Protection for the Following IEC Standards: IEC 6100042 (ESD) 30 kV (Contact) XX = Specific Device Code IEC6100045 (Lightning) 35 A (8/20 s) M = Date Code FlowThru Routing Scheme = PbFree Package 2 pF Max, I/O to I/O UL Flammability Rating of 94 V0 This is a PbFree Device ORDERING INFORMATION Device Package Shipping Typical Applications 10/100 and GbE Ethernet TVS8814MUTAG UDFN8 3000 / Tape & Reel (PbFree) MagJacks / Integrated Magnetics Notebooks/Desktops/Servers TVS8818MUTAG UDFN10 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, MAXIMUM RATINGS (T = 25C unless otherwise noted) J including part orientation and tape sizes, please Rating Symbol Value Unit refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Operating Junction Temperature Range T 55 to +125 C J Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T 260 C L Maximum (10 Seconds) IEC 6100042 Contact (ESD) ESD 30 kV IEC 6100042 Air (ESD) 30 kV Maximum Peak Pulse Current I A PP 8/20 s T = 25C 35 A 10/700 s T = 25C 20 A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: February, 2016 Rev. 0 TVS8814/DTVS8814, TVS8818 TVS8814 Pin2Pin3 Pin6 Pin7 GND GND GND I/O I/O I/O I/O GND GND GND Pins 1, 4, 5, 8 Note: Common GND Only minimum of 1 GND connection required TVS8818 GND Pin1 Pin2 Pin4 Pin5 Pin6 Pin7 Pin9 Pin10 I/O I/O = I/O I/O GND GND GND Pins 3, 8 I/O I/O Note: Common GND Only minimum of 1 GND connection required I/O I/O GND Figure 1. Pin Schematic ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter V Working Peak Voltage R RWM DYN I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I V V V BR T CL BR RWM V I R V I Test Current CL T I T V Holding Reverse Voltage HOLD I Holding Reverse Current R HOLD DYN R Dynamic Resistance DYN I Maximum Peak Pulse Current I PP PP V Clamping Voltage I UniDirectional TVS C PP V = V + (I * R ) C HOLD PP DYN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V Any I/O to GND (Note 1) 3.0 V RWM Forward Voltage V I = 10 mA, GND to All IO Pins 0.5 0.85 1.1 V F F Breakdown Voltage V I = 1 mA, I/O to GND 3.2 3.5 5.0 V BR T Reverse Leakage Current I V = 3.0 V, I/O to GND 0.5 A R RWM Clamping Voltage V I = 1 A, Any I/O to GND (8/20 s pulse) 5.0 V C PP Clamping Voltage V I = 10 A, Any I/O to GND (8/20 s pulse) 6.0 V C PP Clamping Voltage V 10 V I = 25 A, Any I/O to GND (8/20 s pulse) C PP Clamping Voltage V 15 V I = 35 A, Any I/O to GND (8/20 s pulse) C PP Clamping Voltage V IEC6100042, 8 kV Contact See Figures 7 and 8 V C Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins 1.5 2.0 pF J R Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 5.0 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. TVS devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater than the DC RWM or continuous peak operating voltage level. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
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FS8
FSC
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ON SEMI
ON Semicon
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ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
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onsemi / Fairchild
OOF
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