X-On Electronics has gained recognition as a prominent supplier of OSI3NAS1C1A Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. OSI3NAS1C1A Infrared Emitters - High Power are a product manufactured by Optosupply. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

OSI3NAS1C1A Optosupply

OSI3NAS1C1A electronic component of Optosupply
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Part No.OSI3NAS1C1A
Manufacturer: Optosupply
Category: Infrared Emitters - High Power
Description: IR transmitter; 3528,PLCC2; 27mW; 120°; ?p max:850nm; SMD
Datasheet: OSI3NAS1C1A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 0.4843 ea
Line Total: USD 0.97 
Availability - 0
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 2
Multiples : 1
2 : USD 0.4843
10 : USD 0.288
50 : USD 0.2396
83 : USD 0.1976
227 : USD 0.1874

   
Manufacturer
Product Category
Mounting
Case
Type Of Diode
Wavelength Of Peak Sensitivity
Dimensions
Optical Power
Viewing Angle
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the OSI3NAS1C1A from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the OSI3NAS1C1A and other electronic components in the Infrared Emitters - High Power category and beyond.

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3.5x2.8x1.9mm Infrared SMD LED 3.5x2.8x1.9mm Infrared SMD LED OSI3NAS1C1A Features Outline Dimension High Radiant Power PLCC2 Top SMD LEDs 33..55xx22..88xx11..99mm Standard Directivity Anode 1 Superior Weather-resistance UV Resistant Epoxy Water Clear Type 2 Applications Automatic Control System Photo Detector 1,Anode Computer I/O Peripheral 2,Cathode Absolute Maximum Rating (Ta=25)))) Directivity Item Symbol Value Unit 0 DC Forward Current I 100 mA F Pulse Forward Current* I 200 mA FP Reverse Voltage V 5 V R Power Dissipation P 180 mW D 0 Operating Temperature Topr -30 ~ +85 Storage Temperature Tstg -40~ +100 Lead Soldering Temperature Tsol - 260/5sec *Pulse width Max.10ms Duty ratio max 1/10 Electrical -Optical Characteristics (Ta=25)))) Unit Item Symbol Condition Min. Typ. Max. DC Forward Voltage V I =100mA - 1.6 1.8 V F F DC Reverse Current I V =5V - - 10 A R R Peak Wavelength I =100mA - 850 - nm p F Radiant Power P I =100mA 27 - - mW O F Radiant Intensity Ie I =100mA 30 40 - mW/Sr F 50% Power Angle 21/2 I =100mA - 120 - deg F *1 Tolerance of peak wavelength is +1nm *2 Tolerance of Radiant Power is +15% LED & Application Technologies 33..55xx22..88xx11..99mmmm IInnffrraarreedd SSMMDD LLEEDD OSI3NAS1C1A AlGaAs LED TYPICAL ELECTRICAL/OPTICAL CHARACTERISTIC CURVES Relative Power-IF I F - V F (Pulse, tw 1 0 0 s, Duty 1 / 1 0 0 ,Ta=25 ) 1 0 0 2 4 0 ) A 2 0 0 m ( f I 1 0 t 1 6 0 n e r r u1 2 0 C d r 8 0 a 1 w r o 4 0 F 0 2 . 5 0 . 5 1 . 0 1 . 5 2 3 3 . 5 0 . 1 1 0 0 1 1 0 1 0 0 0 F o r w a r d V o l t a g e V f ( V ) Forward Current: IF(mA) Re la t iv e I n te n si t y - Ta V f Ta 4 .0 A m 2 . 0 0 0 ) 2 .5 1 C V ( 2 .0 y 1 . 5 f t 5 i V s 2 n e e 1 .5 g t d a t n e l I 1 . 0 z o i e l 1 .0 V v a i t d m r a r l a 0 .5 o 0 .5 e w r R N o F 0 - 25 0 25 5 0 7 5 1 00 - 20 0 20 4 0 60 8 0 100 A mbi ent Temper ature Ta ( C) Ambient Temperature Ta (C) If T a W a v e le n g t h C h a ra c te r is t ic s Ta= 25C 2 0 0 1 0 0 ) 1 6 0 y 8 0 t A i s m n ( e f t I 1 2 0 n 6 0 t I n s e u r R t h ( J - a ) = 2 5 0 / W r o 8 0 u n R t h ( J - a ) = 3 0 0 / W i 4 0 C R t h ( J - a ) = 3 5 0 / W m d u r L a 4 0 e w r v 2 0 i o t F a l 0 e R - 3 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 0 7 0 0 7 5 0 8 0 0 8 5 0 9 5 0 1 0 0 0 9 0 0 A m b i e n t T e m p e r a t u r e T a ( C ) LED & Application Technologies Relative Power

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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