2016-09-23 Infrared Emitter (850 nm) Version 1.3 SFH 4356 Features: Wavelength 850nm Short switching times Good spectral match to silicon photodetectors package similar to SFH 309 Applications IR remote control Sensor technology Discrete optocouplers Discrete interrupters Notes Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Ordering Information Type: Radiant Intensity Ordering Code I mW/sr e I = 100 mA, t = 20 ms F p SFH 4356 90 ( 40) Q65111A6136 SFH 4356-UV 40 ... 125 Q65111A8863 Note: measured at a solid angle of = 0.01 sr 2016-09-23 1Version 1.3 SFH 4356 Maximum Ratings (T = 25 C) A Parameter Symbol Values Unit Operation and storage temperature range T T -40 ... 100 C op stg Reverse voltage V 5 V R Forward current I 100 mA F Surge current I 1 A FSM (t 200 s, D = 0) p Power consumption P 200 mW tot ESD withstand voltage V 2 kV ESD (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) 1) page 9 Thermal resistance junction - ambient R 350 K / W thJA Thermal resistance junction - soldering point R 150 K / W thJS Characteristics (T = 25 C) A Parameter Symbol Values Unit Peak wavelength (typ) 860 nm peak (I = 100 mA, t = 20 ms) F p Centroid wavelength (typ) 850 nm centroid (I = 100 mA, t = 20 ms) F p Spectral bandwidth at 50% of I (typ) 30 nm max (I = 100 mA, t = 20 ms) F p Half angle (typ) 20 Dimensions of active chip area (typ) L x W 0.3 x 0.3 mm x mm Rise and fall time of I ( 10% and 90% of I ) (typ) t , t 12 ns e e max r f (I = 100 mA, R = 50 ) F L Forward voltage (typ (max)) V 1.7 ( 2) V F (I = 100 mA, t = 20 ms) F p Forward voltage (typ (max)) V 3.6 ( 4.6) V F (I = 1A, t = 100 s) F p Reverse current I not designed for A R (V = 5 V) reverse operation R Total radiant flux (typ) 80 mW e (I =100 mA, t =20 ms) F p 2016-09-23 2