This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Unit: mm Complementary to 2SC1473A 5.00.2 4.00.2 Features High collector-emitter voltage (Base open) V CEO 0.70.1 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 300 V CBO +0.15 +0.15 0.45 0.45 0.1 0.1 Collector-emitter voltage (Base open) V 300 V +0.6 +0.6 CEO 2.5 2.5 0.2 0.2 Emitter-base voltage (Collector open) V 5V EBO 123 Collector current I 70 mA C 1: Emitter 2: Collector Peak collector current I 100 mA CP 3: Base Collector power dissipation P 750 mW TO-92-B1 Package C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 100 A, I = 0 300 V CEO C B Emitter-base voltage (Collector open) V I = 1 A, I = 0 5V EBO E C * Forward current transfer ratio h V = 10 V, I = 5 mA 30 150 FE CE C Collector-emitter saturation voltage V I = 10 mA, I = 1 mA 0.6 V CE(sat) C B Transition frequency f V = 10 V, I = 10 mA, f = 200 MHz 50 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 7 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank P Q h 30 to 100 60 to 150 FE Publication date: January 2003 SJC00030BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1767 P T I V I V C a C CE C BE 1 000 100 120 V = 10 V T = 25C CE a 25C I = 1.0 mA B 100 800 80 T = 75C a 25C 0.9 mA 0.8 mA 80 600 60 0.7 mA 0.6 mA 60 0.5 mA 400 40 0.4 mA 40 0.3 mA 200 20 20 0.2 mA 0.1 mA 0 0 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 ( ) Ambient temperature T C Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE V I h I f I CE(sat) C FE C T E 100 300 120 I / I = 10 C B V = 10 V CE V = 10 V CB T = 25C a 250 100 10 200 80 T = 75C a 1 150 60 25C T = 75C 25C a 100 25C 40 0.1 25C 50 20 0.01 0 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 Collector current I (mA) Collector current I (mA) Emitter current I (mA) C C E C V I T ob CB CEO a 10000 20 V = 120 V CE I = 0 E f = 1 MHz T = 25C a 16 1000 12 100 8 10 4 1 0 0 40 80 120 160 200 240 1 10 100 ( ) ( ) Ambient temperature T C Collector-base voltage V V a CB 2 SJC00030BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.