X-On Electronics has gained recognition as a prominent supplier of 2SB09450Q Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB09450Q Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB09450Q Panasonic

2SB09450Q electronic component of Panasonic
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Part No.2SB09450Q
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 80V 5A TO-220F
Datasheet: 2SB09450Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 3.3243
N/A

Obsolete
   
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RoHS - XON
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We are delighted to provide the 2SB09450Q from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB09450Q and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Unit: mm Complementary to 2SD1270 10.00.2 4.20.2 5.50.2 2.70.2 Features 3.10.1 Low collector-emitter saturation voltage V CE(sat) Satisfactory linearity of forward current transfer ratio h FE Large collector current I C 1.30.2 Full-pack package which can be installed to the heat sink with one screw. 1.40.1 +0.2 0.5 0.1 Absolute Maximum Ratings T = 25C 0.80.1 C Parameter Symbol Rating Unit 2.540.3 Collector-base voltage (Emitter open) V 130 V CBO 5.080.5 1: Base Collector-emitter voltage (Base open) V 80 V CEO 2: Collector 132 Emitter-base voltage (Collector open) V 7V 3: Emitter EBO EIAJ: SC-67 Collector current I 5A C TO-220F-A1 Package Peak collector current I 10 A CP P 40 W Collector power C dissipation T = 25C2 a Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 10 mA, I = 0 80 V CEO C B Collector-base cutoff current (Emitter open) I V = 100 V, I = 0 10 A CBO CB E Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 50 A EBO EB C Forward current transfer ratio h V = 2 V, I = 0.1 A 45 FE1 CE C * h V = 2 V, I = 2 A 60 260 FE2 CE C Collector-emitter saturation voltage V I = 4 A, I = 0.2 A 0.5 V CE(sat) C B Base-emitter saturation voltage V I = 4 A, I = 0.2 A 1.5 V BE(sat) C B Transition frequency f V = 10 V, I = 0.5 A, f = 10 MHz 30 MHz T CE C Turn-on time t I = 2 A, I = 0.2 A, I = 0.2 A 0.13 s on C B1 B2 Storage time t V = 50 V 0.50 s stg CC Fall time t 0.13 s f Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R Q P h 60 to 120 90 to 180 130 to 260 FE2 Note) The part number in the parenthesis shows conventional part number. Publication date: February 2003 SJD00024BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0945 P T I V V I C a C CE CE(sat) C 50 100 8 I /I =20 C B (1)TC=Ta T =25C C (2)With a 1001002mm I =120mA B Al heat sink 100mA (3)With a 50502mm 40 Al heat sink 6 10 80mA (4)Without heat sink (P =2W) C 60mA 30 40mA 4 1 (1) 30mA 20 25C 20mA T =100C C 2 0.1 10 10mA 25C (2) (3) 3mA (4) 0 0.01 0 0 40 80 120 160 0 2 4 6 8 10 0.01 0.1 1 10 Ambient temperature T (C) Collector-emitter voltage V (V) Collector current I (A) a CE C V I h I f I BE(sat) C FE C T C 4 4 100 10 10 I /I =20 V =2V C B CE VCE=10V f=10MHz T =25C C 3 3 10 10 10 25C TC=100C 25C TC=25C 2 2 1 10 10 25C 100C 0.1 10 10 0.01 1 1 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 Collector current I (A) Collector current I (A) Collector current I (A) C C C C V t , t , t I Safe operation area ob CB on stg f C 4 10 100 100 Non repetitive pulse Pulsed tw=1ms IE=0 Duty cycle=1% TC=25C f=1MHz IC/IB=10 T =25C C (IB1=IB2) V =50V CC ICP 3 10 10 10 TC=25C IC t=0.5ms t=10ms t=1ms 2 10 1 1 tstg DC t on 10 0.1 0.1 tf 1 0.01 0.01 0.1 1 10 100 0 0.8 1.6 2.4 3.2 1 10 100 1 000 Collector-base voltage V (V) Collector current I (A) Collector-emitter voltage V (V) CB C CE 2 SJD00024BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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