X-On Electronics has gained recognition as a prominent supplier of 2SB09700RL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB09700RL Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB09700RL Panasonic

2SB09700RL electronic component of Panasonic
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Part No.2SB09700RL
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 10V 0.5A MINI-3P
Datasheet: 2SB09700RL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.7603
10 : USD 0.6451
25 : USD 0.5645
100 : USD 0.484
250 : USD 0.4194
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB09700RL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB09700RL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm +0.10 0.40 0.05 +0.10 0.16 0.06 Features 3 Low collector-emitter saturation voltage V CE(sat) Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 2 packing (0.95) (0.95) 1.90.1 Absolute Maximum Ratings T = 25C a +0.20 2.90 0.05 Parameter Symbol Rating Unit 10 Collector-base voltage (Emitter open) V 15 V CBO Collector-emitter voltage (Base open) V 10 V CEO 1: Base Emitter-base voltage (Collector open) V 7V EBO 2: Emitter Collector current I 0.5 A C 3: Collector EIAJ: SC-59 Peak collector current I 1A CP Mini3-G1 Package Collector power dissipation P 200 mW C Marking Symbol: 1R Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 15 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 10 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 7V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 100 nA CBO CB E 1 2 * * Forward current transfer ratio h V = 2 V, I = 0.5 A 130 350 FE1 CE C h V = 2 V, I = 1 A 60 FE2 CE C 1 * Collector-emitter saturation voltage V I = 0.4 A, I = 8 mA 0.16 0.30 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 0.4 A, I = 8 mA 0.8 1.2 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 130 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 22 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank R S h 130 to 220 180 to 350 FE1 Note) The part number in the parenthesis shows conventional part number. Publication date: March 2003 SJC00063BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0970 P T I V V I C a C CE BE(sat) C 240 1.2 100 I / I = 50 C B T = 25C a I = 10 mA B 200 1.0 9 mA 10 8 mA 160 0.8 7 mA 6 mA 25C T = 25C a 5 mA 120 0.6 1 4 mA 75C 3 mA 80 0.4 0.1 2 mA 40 0.2 1 mA 0 0 0.01 0 40 80 120 160 0.01 0.1 1 10 0 1 2 3 4 5 6 ( ) Ambient temperature T (C) Collector-emitter voltage V (V) Collector current I A a CE C V I h I f I CE(sat) C FE C T E 100 600 200 I / I = 50 V = 10 V C B CB V = 2 V CE T = 25C a 500 160 10 400 T = 75C a 120 25C 1 300 80 25C T = 75C a 200 25C 0.1 40 100 25C 0.01 0 0 0.01 0.1 1 10 0.01 0.1 1 10 1 10 100 Collector current I (A) Collector current I (A) Emitter current I (mA) C C E C V ob CB 80 I = 0 E f = 1 MHz T = 25C a 60 40 20 0 1 10 100 ( ) Collector-base voltage V V CB 2 SJC00063BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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