This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1219G Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820G Features Package Large collector current I Code C S-Mini type package, allowing downsizing of the equipment and auto- SMini3-F2 matic insertion through the tape packing and the magazine packing. Marking Symbol: D Pin Name Absolute Maximum Ratings T = 25C a 1. Base Parameter Symbol Rating Unit 2. Emitter 3. Collector Collector-base voltage (Emitter open) V 60 V CBO Collector-emitter voltage (Base open) V 50 V CEO Emitter-base voltage (Collector open) V 5V EBO Collector current I 500 mA C Peak collector current I 1A CP Collector power dissipation P 150 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 5V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E *1 *2 Forward current transfer ratio h V = 10 V, I = 150 mA 85 340 FE1 CE C h V = 10 V, I = 500 mA 40 FE2 CE C 1 * Collector-emitter saturation voltage V I = 300 mA, I = 30 mA 0.35 0.60 V CE(sat) C B *1 Base-emitter saturation voltage V I = 300 mA, I = 30 mA 1.1 1.5 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 6 15 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank Q R S No-rank h 85 to 170 120 to 240 170 to 340 85 to 340 FE1 Marking symbol DQ DR DS D Note) Product of no-rank is not classified and have no marking symbol for rank. Publication date: April 2007 SJC00353AED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1219G P T I V I I C a C CE C B 240 800 800 T = 25C a V = 10 V CE T = 25C a 700 700 200 I = 10 mA B 9 mA 8 mA 600 600 7 mA 6 mA 160 5 mA 500 500 4 mA 120 400 400 3 mA 300 300 2 mA 80 200 1 mA 200 40 100 100 0 0 0 0 40 80 120 160 0 4 8 12 16 20 0 2 4 6 8 10 ( ) ( ) ( ) Ambient temperature T C Collector-emitter voltage V V Base current I mA a CE B V I V I h I BE(sat) C CE(sat) C FE C 100 100 600 I / I = 10 I / I = 10 C B C B V = 10 V CE 500 10 10 400 25C T = 25C T = 75C a a 1 1 300 75C 25C T = 75C a 25C 200 25C 25C 0.1 0.1 100 0.01 0.01 0 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 Collector current I (A) ( ) C Collector current I A Collector current I (A) C C f I C V V R T E ob CB CER BE 240 24 120 I = 0 E V = 10 V I = 2 mA CB C f = 1 MHz T = 25C T = 25C a a T = 25C a 200 20 100 160 16 80 120 12 60 2SB1219A 80 8 40 2SB1219 40 4 20 0 0 0 1 10 100 1 10 100 1 10 100 1 000 Emitter current I (mA) Collector-base voltage V (V) Base-emitter resistance R (k ) E CB BE 2 SJC00353AED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.