X-On Electronics has gained recognition as a prominent supplier of 2SB1321A0A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1321A0A Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB1321A0A Panasonic

2SB1321A0A electronic component of Panasonic
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Part No.2SB1321A0A
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 50V 0.5A MT-1
Datasheet: 2SB1321A0A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.699
10 : USD 0.5472
25 : USD 0.4618
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB1321A0A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1321A0A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Unit: mm 6.90.1 2.50.1 Complementary to 2SD1992A (0.7) (4.0) (0.8) Features 0.65 max. Allowing supply with the radial taping Large collector power dissipation P (600 mW) C Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit +0.10 +0.10 0.45 0.45 0.05 0.05 Collector-base voltage (Emitter open) V 60 V CBO 1.050.05 Collector-emitter voltage (Base open) V 50 V CEO 2.50.5 2.50.5 Emitter-base voltage (Collector open) V 7V EBO 1: Emitter 2: Collector Collector current I 0.5 A C 123 3: Base Peak collector current I 1A CP MT-1-A1 Package Collector power dissipation P 600 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 7V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 20 V, I = 0 1 A CEO CE B 2 * Forward current transfer ratio h V = 10 V, I = 10 mA 85 340 FE1 CE C 1 * h V = 10 V, I = 500 mA 40 FE2 CE C Collector-emitter saturation voltage V I = 300 mA, I = 30 mA 0.35 0.60 V CE(sat) C B Transition frequency f V = 10 V, I = 10 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 6 15 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank Q R S No-rank h 85 to 170 120 to 240 170 to 340 85 to 340 FE1 Product of no-rank is not classified and have no marking symbol for rank. Publication date: March 2003 SJC00079BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1321A P T I V I I C a C CE C B 800 1.2 0.8 V = 10 V T = 25C CE a T = 25C a 0.7 1.0 600 0.6 0.8 I = 10 mA B 0.5 9 mA 8 mA 400 0.6 0.4 7 mA 6 mA 5 mA 0.3 4 mA 0.4 3 mA 200 0.2 2 mA 0.2 1 mA 0.1 0 0 0 0 40 80 120 160 0 2 4 6 8 10 12 0 2 4 6 8 10 ( ) Ambient temperature T C Collector-emitter voltage V (V) Base current I (mA) a CE B V I V I h I CE(sat) C BE(sat) C FE C 100 100 600 I / I = 10 C B I / I = 10 C B V = 10 V CE 500 10 10 400 25C T = 25C a 1 T = 75C 1 300 a 75C T = 75C a 25C 25C 200 25C 25C 0.1 0.1 100 0.01 0.01 0 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 Collector current I (A) Collector current I (A) Collector current I (A) C C C f I C V V R T E ob CB CER BE 240 24 120 I = 0 E V = 10 V I = 2 mA CB C f = 1 MHz T = 25C T = 25C a a T = 25C a 200 20 100 160 16 80 120 12 60 80 8 40 40 4 20 0 0 0 1 10 100 1 10 100 1 10 100 1 000 Emitter current I (mA) Collector-base voltage V (V) ( ) Base-emitter resistance R k E CB BE 2 SJC00079BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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