This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1440 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification 4.50.1 1.60.2 1.50.1 Complementary to 2SD2185 Features Low collector-emitter saturation voltage V CE(sat) 3 12 0.40.08 0.50.08 0.40.04 Mini Power type package, allowing downsizing of the equipment 1.50.1 and automatic insertion through the tape packing and the maga- zine packing. 3 Absolute Maximum Ratings T = 25C a 45 3.00.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 50 V CBO 1: Base Collector-emitter voltage (Base open) V 50 V 2: Collector CEO 3: Emitter Emitter-base voltage (Collector open) V 5V EBO MiniP3-F1 Package Collector current I 2A C Marking Symbol: 1 I Peak collector current I 3A CP * Collector power dissipation P 1W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg 2 Note) : Print circuit board: Copper foil area of 1 cm or more, and the board * thickness of 1.7 mm for the collector portion Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emiter open) V I = 10 A, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 50 V CEO C B Emiter-base voltage (Collector open) V I = 10 A, I = 0 5V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E 1 2 * * Forward current transfer ratio h V = 2 V, I = 200 mA 120 340 FE1 CE C h V = 2 V, I = 1 A 60 FE2 CE C 1 * Collector-emitter saturation voltage V I = 1 A, I = 50 mA 0.2 0.3 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 1 A, I = 50 mA 0.85 1.2 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 150 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 45 60 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank R S h 120 to 240 170 to 340 FE1 Publication date: October 2003 SJC00085DED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1440 P T I V V I C a C CE CE(sat) C 1.4 120 100 I / I = 20 T = 25C C B a Copper plate at the collector 2 is more than 1 cm in area, I = 700 A 1.2 B 1.7 mm in thickness 100 10 600 A 1.0 80 500 A 0.8 400 A 60 1 0.6 T = 75C a 300 A 40 25C 0.4 25C 200 A 0.1 20 0.2 100 A 0 0 0.01 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0.01 0.1 1 10 ( ) ( ) ( ) Ambient temperature T C Collector-emitter voltage V V Collector current I A a CE C V I h I f I BE(sat) C FE C T E 100 10000 240 I / I = 20 V = 2 V C B CE V = 10 V CB f = 200 MHz T = 25C a 200 10 1000 160 25C T = 75C 25C a T = 25C a 1 100 120 25C 75C 80 0.1 10 40 0.01 1 0 0.01 0.1 1 10 0.01 0.1 1 10 1 10 100 ( ) ( ) ( ) Collector current I A Collector current I A Emitter current I mA C C E C V ob CB 120 I = 0 E f = 1 MHz T = 25C a 100 80 60 40 20 0 1 10 100 ( ) Collector-base voltage V V CB SJC00085DED 2 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.