This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1446 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.90.1 2.50.1 Complementary to 2SD2179 0.7 4.0 (0.8) Features Low collector-emitter saturation voltage V 0.65 max. CE(sat) Allowing supply with the radial taping Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 50 V CBO +0.10 +0.10 0.45 0.45 Collector-emitter voltage (Base open) V 50 V 0.05 0.05 CEO 1.050.05 Emitter-base voltage (Collector open) V 5V EBO 2.50.5 2.50.5 Collector current I 5A C 1: Emitter 2: Collector Peak collector current I 7A CP 123 3: Base * Collector power dissipation P 1W MT-2-A1 Package C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg 2 Note) : Print circuit board: Copper foil area of 1 cm or more, and the board * thickness of 1.7 mm for the collector portion Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 5V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E 2 * Forward current transfer ratio h V = 2 V, I = 500 mA 120 340 FE1 CE C *1 h V = 2 V, I = 2.5 A 60 FE2 CE C 1 * Collector-emitter saturation voltage V I = 2 A, I = 100 mA 0.2 0.3 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 2 A, I = 100 mA 0.85 1.20 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 70 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 90 120 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank P Q h 120 to 240 170 to 340 FE1 Publication date: January 2003 SJC00086BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1446 P T I V V I C a C CE CE(sat) C 1.2 2.4 10 I / I = 20 Copper plate at the collector C B T = 25C a 2 is more than 1 cm in area, 1.7 mm in thickness 1.0 2.0 I = 8 mA B 1 7 mA 0.8 1.6 6 mA T = 100C a 25C 0.6 1.2 0.1 5 mA 25C 4 mA 0.4 0.8 3 mA 0.01 2 mA 0.2 0.4 1 mA 0 0 0.001 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0.01 0.1 1 10 Ambient temperature T (C) Collector-emitter voltage V (V) ( ) Collector current I mA a CE C V I h I f I BE(sat) C FE C T E 500 100 200 I / I = 20 V = 10 V C B CB V = 2 V CE T = 25C a 400 160 10 T = 100C a 300 120 25C T = 25C a 1 25C 200 100C 80 25C 0.1 100 40 0 0.01 0 0.01 0.1 1 10 0.01 0.1 1 10 1 10 100 Collector current I (A) Collector current I (A) ( ) C Emitter current I mA C E C V ob CB 240 I = 0 E f = 1 MHz T = 25C a 200 160 120 80 40 0 1 10 100 ( ) Collector-base voltage V V CB 2 SJC00086BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.