X-On Electronics has gained recognition as a prominent supplier of 2SC13830R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC13830R Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC13830R Panasonic

2SC13830R electronic component of Panasonic
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See Product Specifications
Part No.2SC13830R
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS NPN 25V 1A TO-92L
Datasheet: 2SC13830R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6188 ea
Line Total: USD 0.62

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 0.6188
10 : USD 0.4051
25 : USD 0.3503
100 : USD 0.2902

   
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RoHS - XON
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We are delighted to provide the 2SC13830R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC13830R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC1383 Silicon NPN epitaxial planar type For low-frequency power amplication and driver amplication Complementary to 2SA0683 Package Features Low collector-emitter saturation voltage V Code CE(sat) Complementary pair with 2SA0683 TO-92L-A1 Pin Name Absolute Maximum Ratings T = 25C 1. Emitter a 2. Collector Parameter Symbol Rating Unit 3. Base Collector-base voltage (Emitter open) V 30 V CBO Collector-emitter voltage (Base open) V 25 V CEO Emitter-base voltage (Collector open) V 5 V EBO Collector current I 1 A C Peak collector current I 1.5 A CP Collector power dissipation P 1 W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 30 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 25 V CEO C B Emitter-base voltage (Collector open) V I = 10 mA, I = 0 5 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 mA CBO CB E 2 * h V = 10 V, I = 500 mA 85 340 FE1 CE C 1 * Forward current transfer ratio h V = 5 V, I = 1 A 50 FE2 CE C Collector-emitter saturation voltage V I = 500 mA, I = 50 mA 0.2 0.4 V CE(sat) C B Base-emitter saturation voltage V I = 500 mA, I = 50 mA 0.85 1.20 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 11 20 pF re CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement 2: Rank classication * Rank Q R S h 85 to 170 120 to 240 170 to 340 FE1 Publication date : October 2008 SJC00104DED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC1383 2SC1384 PC-Ta 2SC1384 IC-VCE 2SC1384 IC-IB P T I V I I C a C CE C B 1.50 1.2 1.2 T = 25C a V = 10 V CE T = 25C a 1.0 1.0 1.25 I = 10 mA B 9 mA 8 mA 0.8 1.00 0.8 7 mA 6 mA 0.75 0.6 0.6 5 mA 4 mA 3 mA 0.4 0.50 0.4 2 mA 0.2 0.25 0.2 1 mA 0 0 0 0 40 80 120 160 0 2 4 6 8 10 0 2 4 6 8 10 12 Ambient temperature T (C) Collector-emitter voltage V (V) Base current I (mA) CE a B 2SC1383 VCE(sat)-IC 2SC1383 VBE(sat)-IC 2SC1384 hFE-IC V I V I h I CE(sat) C BE(sat) C FE C 10 100 600 I / I = 10 I / I = 10 C B C B V = 10 V CE 500 1 10 T = 75C a 400 25C 25C T = 25C a 25C 0.1 300 1 75C T = 75C a 200 25C 0.01 0.1 25C 100 0.001 0.01 0 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 Collector current I (A) Collector current I (A) Collector current I (A) C C C 2SC1384 fT-IE 2SC1384 Cob-VCB 2SC1383 VCER-RBE f I C V V R T E ob CB CER BE 200 50 120 V = 10 V I = 0 I = 10 mA CB E C T = 25C f = 1 MHz a T = 25C a T = 25C 100 a 160 40 80 120 30 60 80 20 40 40 10 20 0 0 0 1 10 100 1 10 100 0.1 1 10 100 Emitter current I (mA) Collector-base voltage V (V) Base-emitter resistance R (k) E CB BE 2 SJC00104DED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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