This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Unit: mm +0.5 8.0 0.1 3.20.2 3.160.1 Features High collector-emitter voltage (Base open) V CEO High transition frequency f T TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 250 V CBO 0.750.1 0.50.1 0.50.1 1.760.1 Collector-emitter voltage (Base open) V 250 V CEO 4.60.2 2.30.2 Emitter-base voltage (Collector open) V 7V EBO 1: Emitter Collector current I 100 mA 123 C 2: Collector 3: Base Peak collector current I 150 mA CP TO-126B-A1 Package 1 * Collector power dissipation P 1.2 W C 2 * 4 Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Note) 1: Without heat sink * 2 :With a 100 100 2 mm Al heat sink * Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Emitter-base voltage (Collector open) V I = 0.1 mA, I = 07 V EBO E C Base-emitter voltage V V = 20 V, I = 40 mA 1.2 V BE CE C Collector-emitter cutoff current I V = 250 V, R = 100 k 100 A CER CE BE (Resistor between B and E) Forward current transfer ratio h V = 20 V, I = 40 mA 40 FE1 CE C h V = 50 V, I = 5 mA 30 FE2 CE C Collector-emitter saturation voltage V I = 50 mA, I = 5 mA 1.2 V CE(sat) C B Transition frequency f V = 10 V, I = 10 mA, f = 200 MHz 100 MHz T CB E Collector output capacitance C V = 50 V, I = 0, f = 1 MHz 3.0 4.5 pF ob CB E (Common base, input open circuited) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: January 2003 SJD00098BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC2258 P T I V I V C a C CE C BE 120 5 120 T =25C C VCE=10V (1)With a 1001002mm Al heat sink 1.8mA IB=2.0mA 25C (2)Without heat sink (1) 100 100 1.6mA T =100C 25C C 4 1.4mA 1.2mA 80 80 1.0mA 3 0.8mA 0.6mA 60 60 0.4mA 2 40 40 0.2mA (2) 1 20 20 0 0 0 0 40 80 120 1600124 6 80020.4 0.8 1.2 1.6.0 Ambient temperature T (C) Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE I I V I I V C B CE(sat) C B BE 120 100 3.0 IC/IB=10 VCE=10V VCE=10V T =25C C TC=25C 100 2.5 10 80 2.0 60 1 1.5 T =100C C 40 25C 1.0 0.1 20 25C 0.5 0 0.01 0 0.1 1 10 100 0 0.4 0.8 1.2 1.6 2.0 0 0.2 0.4 0.6 0.8 1.0 Base current I (mA) Collector current I (A) Base-emitter voltage V (V) B C BE h I f I C V FE C T E ob CB 240 160 10 VCE=10V IE=0 V =10V CB f=1MHz f=200MHz TC=25C 200 TC=25C 8 120 TC=100C 160 6 120 80 25C 4 80 25C 40 2 40 0 0 0 0.01 0.1 1 10 1 10 100 1 10 100 Collector current I (mA) Emitter current I (mA) Collector-base voltage V (V) C E CB 2 SJD00098BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.