This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3935 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing +0.10 +0.1 0.15 0.3 0.0 0.05 Features 3 High transition frequency f T Small collector output capacitance (Common base, input open cir- cuited) C and reverse transfer capacitance (Common base) C ob rb S-Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing (0.65) (0.65) 1.30.1 2.00.2 Absolute Maximum Ratings T = 25C a 10 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 15 V CBO Collector-emitter voltage (Base open) V 10 V 1: Base CEO 2: Emitter Emitter-base voltage (Collector open) V 3V EBO 3: Collector EIAJ: SC-70 Collector current I 50 mA C SMini3-G1 Package Collector power dissipation P 150 mW C Marking Symbol: 1S Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 2 mA, I = 010 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 03 V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 01 A CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 010 A CEO CE B 1 * Forward current transfer ratio h V = 2.4 V, I = 7.2 mA 75 220 FE1 CE C h V = 2.4 V, I = 100 A75 FE2 CE C 2 * h ratio h h : V = 2.4 V, I = 100 A 0.75 1.60 FE FE FE2 CE C h : V = 2.4 V, I = 7.2 mA FE1 CE C Collector-emitter saturation voltage V I = 20 mA, I = 4 mA 0.5 V CE(sat) C B Transition frequency f V = 4 V, I = 7.2 mA, f = 200 MHz 1.4 1.9 2.5 GHz T CB E Collector output capacitance C V = 4 V, I = 0, f = 1 MHz 0.9 1.1 pF ob CB E (Common base, input open circuited) Reverse transfer capacitance C V = 4 V, I = 0, f = 1 MHz 0.25 0.35 pF rb CB E (Common base) Collector-base parameter r C V = 4 V, I = 5 mA, f = 31.9 MHz 11.8 13.5 ps bb C CB E Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Rank classification * Rank P Q h 75 to 130 110 to 220 FE 2: h = h / h * FE FE2 FE1 Publication date: February 2004 SJC00145CED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3935 P T I V I V C a C CE C BE 200 80 60 V = 4 V CE T = 25C 25C a 50 160 T = 75C 25C a 60 40 120 I = 500 A B 400 A 40 30 300 A 80 20 200 A 20 40 100 A 10 0 0 0 0 40 80 120 16001264 8 102 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature T (C) Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE V I h I f I CE(sat) C FE C T E 100 360 4 I / I = 10 C B V = 4 V V = 4 V CB CE T = 25C a 300 10 3 T = 75C a 240 25C 1 180 2 T = 75C a 25C 120 25C 0.1 1 25C 60 0.01 0 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 Collector current I (mA) Collector current I (mA) ( ) Emitter current I mA C C E C V ob CB 1.6 I = 0 E f = 1 MHz T = 25C a 1.2 0.8 0.4 0 1 10 100 ( ) Collector-base voltage V V CB SJC00145CED 2 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.