This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3939 Silicon NPN epitaxial planar type For low-frequency driver amplification Unit: mm 5.00.2 4.00.2 Complementary to 2SA1533 Features High collector-emitter voltage (Base open) V CEO 0.70.1 Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier Allowing supply with the radial taping Absolute Maximum Ratings T = 25C a +0.15 Parameter Symbol Rating Unit +0.2 0.45 0.1 0.45 0.1 Collector-base voltage (Emitter open) V 80 V CBO (1.27) (1.27) Collector-emitter voltage (Base open) V 80 V CEO 1: Emitter 132 Emitter-base voltage (Collector open) V 5V 2: Collector EBO 2.540.15 3: Base Collector current I 0.5 A C TO-92NL-A1 Package Peak collector current I 1A CP Collector power dissipation P 1W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 080 V CBO C E Collector-emitter voltage (Base open) V I = 100 A, I = 080 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 05 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E 1 2 * * Forward current transfer ratio h V = 10 V, I = 150 mA 130 330 FE1 CE C h V = 5 V, I = 500 mA 50 100 FE2 CE C Collector-emitter saturation voltage V I = 300 mA, I = 30 mA 0.2 0.4 V CE(sat) C B Base-emitter saturation voltage V I = 300 mA, I = 30 mA 0.85 1.20 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 120 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 11 20 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank R S h 130 to 220 185 to 330 FE1 Publication date: March 2003 SJC00149BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3939 P T I V I I C a C CE C B 1.2 1.2 1.2 T = 25C a V = 10 V CE T = 25C a I = 10 mA B 1.0 1.0 1.0 9 mA 8 mA 7 mA 0.8 0.8 0.8 6 mA 5 mA 0.6 0.6 0.6 4 mA 3 mA 0.4 0.4 0.4 2 mA 0.2 0.2 0.2 1 mA 0 0 0 0 40 80 120 160 01264 80 01264 80 Ambient temperature T (C) ( ) ( ) Base current I mA a Collector-emitter voltage V V B CE V I V I h I CE(sat) C BE(sat) C FE C 10 300 100 I / I = 10 I / I = 10 C B C B V = 10 V CE 250 1 10 T = 75C a 200 25C T = 75C a 25C T = 25C a 25C 25C 0.1 150 1 25C 75C 100 0.01 0.1 50 0.001 0.01 0 1 10 100 1000 1 10 100 1 000 1 10 100 1 000 ( ) Collector current I (mA) Collector current I (mA) Collector current I mA C C C f I C V I T T E ob CB CBO a 200 4 50 10 V = 10 V CB V = 20 V CB I = 0 E T = 25C a f = 1 MHz T = 25C a 160 40 3 10 120 30 2 10 80 20 10 40 10 0 0 1 1 10 100 1 10 100 0 40 80 120 160 ( ) Emitter current I mA Collector-base voltage V (V) Ambient temperature T (C) E CB a 2 SJC00149BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.