This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC4809J Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit : mm +0.05 1.60 0.03 +0.03 0.12 0.01 1.000.05 3 Features High transition frequency f T Small collector output capacitance (Common base, input open cir- 12 0.270.02 cuited) C and reverse transfer capacitance (Common emitter) C ob rb (0.50)(0.50) SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 5 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 15 V CBO Collector-emitter voltage (Base open) V 10 V 1: Base CEO 2: Emitter Emitter-base voltage (Collector open) V 3V EBO 3: Collector Collector current I 50 mA EIAJ: SC-89 C SSMini3-F1 Package Collector power dissipation P 125 mW C Junction temperature T 125 C Marking Symbol: 1S j Storage temperature T 55 to +125 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 2 mA, I = 010 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 03 V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 01 A CBO CB E Forward current transfer ratio h V = 4 V, I = 5 mA 75 400 FE CE C * h ratio h h : V = 4 V, I = 100 A 0.75 1.6 FE FE FE2 CE C h : V = 4 V, I = 5 mA FE1 CE C Collector-emitter saturation voltage V I = 20 mA, I = 4 mA 0.5 V CE(sat) C B Transition frequency f V = 4 V, I = 5 mA, f = 200 MHz 1.4 1.9 2.7 GHz T CB E Collector output capacitance C V = 4 V, I = 0, f = 1 MHz 1.4 pF ob CB E (Common base, input open circuited) Reverse transfer capacitance C V = 4 V, I = 0, f = 1 MHz 0.45 pF rb CB E (Common emitter) Collector-base parameter r C V = 4 V, I = 5 mA, f = 31.9 MHz 11 ps bb C CB E Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : h = h / h * FE FE2 FE1 Publication date: August 2003 SJC00303AED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4809J P T I V I V C a C CE C BE 140 120 50 T = 25C a V = 4 V CE I = 500 A B 45 400 A 120 100 40 100 300 A 35 80 T = 85C a 25C 30 80 200 A 60 25 60 20 25C 40 100 A 40 15 10 20 20 5 0 0 0 0 20 40 60 80 120 140 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 01264 8 102 Base-Emitter voltage V (V) ( ) ( ) Ambient temperature T C Collector-emitter voltage V V BE a CE V I h I C V CE(sat) C FE C ob CB 140 10 1 f = 1 MHz V = 4 V I / I = 5 CE C B T = 25C a T = 85C a 120 25C 100 25C 80 0.1 60 T = 85C 25C a 40 25C 20 0.01 0 1 0.1 1 10 100 0 2 4 6 8 10 12 14 16 0.1 1 10 100 1 000 ( ) Collector current I mA Collector-base voltage V (V) ( ) C CB Collector current I mA C 2 SJC00303AED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.