This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC5419 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 6.90.1 2.50.1 0.7 4.0 (0.8) Features High collector-emitter voltage (Base open) V CEO High transition frequency f 0.65 max. T Allowing supply with the radial taping Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit +0.10 +0.10 Collector-base voltage (Emitter open) V 300 V 0.45 0.45 CBO 0.05 0.05 1.050.05 Collector-emitter voltage (Base open) V 300 V CEO 2.50.5 2.50.5 Emitter-base voltage (Collector open) V 7V EBO 1: Emitter Collector current I 70 mA C 2: Collector 123 3: Base Peak collector current I 100 mA CP MT-2-A1 Package * Collector power dissipation P 1W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg 2 Note) : Copper plate at the collector is more than 1 cm in area, 1.7 mm in thickness * Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 100 A, I = 0 300 V CEO C B Emitter-base voltage (Collector open) V I = 1 A, I = 07 V EBO E C Collector-emitter cutoff current (Base open) I V = 120 V, I = 01 A CEO CE B * Forward current transfer ratio h V = 10 V, I = 5 mA 30 220 FE CE C Collector-emitter saturation voltage V I = 50 mA, I = 5 mA 1.2 V CE(sat) C B Transition frequency f V = 10 V, I = 10 mA, f = 200 MHz 50 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 10 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank P Q R h 30 to 100 60 to 150 100 to 220 FE Publication date: February 2003 SJC00181CED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC5419 P T I V I V C a C CE C BE 1.2 120 120 Copper plate at the collector T = 25C a V = 10 V CE 2 is more than 1 cm in area, 1.7 mm in thickness 25C 1.8 mA 1.0 100 100 1.6 mA 25C T = 75C a 1.4 mA 1.2 mA I = 2.0 mA B 1.0 mA 0.8 80 80 0.8 mA 0.6 mA 0.6 60 60 0.4 mA 0.4 40 40 0.2 mA 0.2 20 20 0 0 0 0121486 02 0 40 80 120 160 010.2 0.4 0.6 0.8 1.0.2 Collector-emitter voltage V (V) Ambient temperature T (C) ( ) CE Base-emitter voltage V V a BE I I V I I V C B CE(sat) C B BE 120 1.2 10 I / I = 10 C B V = 10 V V = 10 V CE CE T = 25C T = 25C a a 100 1.0 1 T = 75C a 80 0.8 25C 25C 60 0.6 0.1 40 0.4 0.01 20 0.2 0 0 0.001 0 0.4 0.8 1.2 1.6 2.0 2.4 010.2 0.4 0.6 0.8.0 1 10 100 1 000 Base current I (mA) ( ) Base-emitter voltage V (V) Collector current I mA B BE C h I C V FE C ob CB 300 12 f = 1 MHz V = 10 V CE I = 0 E T = 75C a T = 25C a 250 10 25C 200 8 25C 150 6 100 4 50 2 0 0 1 10 100 1 000 1 10 100 ( ) Collector current I mA Collector-base voltage V (V) C CB 2 SJC00181CED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.