X-On Electronics has gained recognition as a prominent supplier of 2SC57880PA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC57880PA Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC57880PA Panasonic

2SC57880PA electronic component of Panasonic
2SC57880PA Panasonic
2SC57880PA Bipolar Transistors - BJT
2SC57880PA  Semiconductors

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See Product Specifications
Part No. 2SC57880PA
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS NPN 60V 3A MT-4
Datasheet: 2SC57880PA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.3886 ea
Line Total: USD 388.6 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 0.3886

0
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 1
Multiples : 1
1 : USD 0.8353
10 : USD 0.6622

   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the 2SC57880PA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC57880PA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SC5788 Silicon NPN epitaxial planar type Unit: mm Power supply for Audio & Visual equipments 10.00.2 5.00.1 1.00.2 such as TVs and VCRs Industrial equipments such as DC-DC converters Features 1.20.1 C 1.0 High-speed switching (t : storage time/t : fall time is short) stg f 1.480.2 2.250.2 Low collector to emitter saturation voltage V CE(sat) 0.650.1 Superior forward current transfer ratio h linearity 0.650.1 FE 0.350.1 Allowing automatic insertion with radial taping 1.050.1 0.550.1 0.550.1 2.50.2 2.50.2 Absolute Maximum Ratings T = 25C C 123 Parameter Symbol Rating Unit 1: Base 2: Collector Collector-base voltage (Emitter open) V 60 V CBO 3: Emitter Collector-emitter voltage (Base open) V 60 V CEO MT-4-A1 Package Emitter-base voltage (Collector open) V 6V EBO Marking Symbol: C5788 Collector current I 3A C Peak collector current I 6A CP Internal Connection T = 25CP 15 W Collector power C C C dissipation T = 25C2 a Junction temperature T 150 C B j Storage temperature T 55 +150 C stg E Electrical Characteristics T = 25C 3C C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 10 mA, I = 060 V CEO C B Collector-base cutoff current (Emitter open) I V = 60 V, I = 0 100 A CBO CB E Collector-emitter cutoff current (Base open) I V = 60 V, I = 0 100 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 01 mA EBO EB C * Forward current transfer ratio h V = 4 V, I = 1 A 120 320 FE1 CE C h V = 4 V, I = 3 A 40 FE2 CE C Collector-emitter saturation voltage V I = 3 A, I = 375 mA 0.8 V CE(sat) C B Transition frequency f V = 10 V, I = 0.1 A, f = 10 MHz 180 MHz T CE C Turn-on time t I = 1 A, Resistance loaded 0.2 0.3 s on C Storage time t I = 0.1 A, I = 0.1 A 0.55 0.7 s stg B1 B2 Fall time t V = 50 V 0.1 0.15 s f CC Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank P Q h 160 to 320 120 to 250 FE1 Publication date: November 2002 SJD00290AED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC5788 I V V I h I C BE CE(sat) C FE C 7 10 10 000 V = 4 V I / I = 8 T = 25C CE C B a V = 4 V CE 6 1 1 000 5 4 0.1 100 3 2 0.01 10 1 0.001 1 0 0 0.5 1.0 1.5 2.0 0.01 0.1 1 10 0.01 0.1 1 10 Collector current I (A) Collector current I (A) Base-emitter voltage V (V) C C BE Safe operation area 100 Non repetitive pulse T = 25C C 10 I CP t = 1 ms I C t = 1 s t = 10 ms 1 0.1 0.01 1 10 100 1 000 Collector-emitter voltage V (V) CE 2 SJD00290AED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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