This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm +0.05 +0.05 0.33 0.10 0.02 0.02 Features 3 High transition frequency f T Small collector output capacitance (Common base, input open cir- cuited) C and reverse transfer capacitance (Common base) C ob rb +0.05 12 0.23 0.02 SSS-Mini type package, allowing downsizing of the equipment (0.40)(0.40) 0.800.05 and automatic insertion through the tape packing 1.200.05 5 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 15 V CBO Collector-emitter voltage (Base open) V 10 V CEO 1: Base Emitter-base voltage (Collector open) V 3V EBO 2: Emitter Collector current I 50 mA 3: Collector C SSSMini3-F1 Package Collector power dissipation P 100 mW C Junction temperature T 125 C Marking Symbol: 1S j Storage temperature T 55 to +125 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 2 mA, I = 010 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 03 V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 01 A CBO CB E Forward current transfer ratio h V = 4 V, I = 5 mA 75 400 FE CE C h ratio h V = 4 V, I = 100 A 0.75 1.6 FE FE CE C V = 4 V, I = 5 mA CE C Collector-emitter saturation voltage V I = 20 mA, I = 4 mA 0.5 V CE(sat) C B Transition frequency f V = 4 V, I = 5 mA, f = 200 MHz 1.4 1.9 2.7 GHz T CE E Collector output capacitance C V = 4 V, I = 0, f = 1 MHz 1.4 pF ob CB E (Common base, input open circuited) Reverse transfer capacitance C V = 4 V, I = 0, f = 1 MHz 0.45 pF rb CB E (Common base) Collector-base parameter r C V = 4 V, I = 5 mA, f = 31.9 MHz 11 ps bb C CB E Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: April 2004 SJC00306AED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC5939 P T I V I V C a C CE C BE 120 50 50 T = 25C a I = 500 A B 45 V = 4 V CE 25C 100 40 40 400 A 35 80 T = 85C a 300 A 30 30 60 25 200 A 20 20 40 15 25C 100 A 10 10 20 5 0 0 0 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1 1.2 01264 8 102 Base-emitter voltage V (V) Ambient temperature T (C) Collector-emitter voltage V (V) BE a CE V I h I C V CE(sat) C FE C ob CB 1 140 10 I /I = 5 f = 1 MHz C B V = 4 V T = 25C CE a 120 25C T = 85C a 100 25C 80 0.1 60 T = 85C a 25C 40 25C 20 0 0.01 1 0.1 1 10 100 0.1 1 10 02 4 6 8 10 12 14 16 Collector current I (mA) Collector current I (mA) Collector-base voltage V (V) C C CB 2 SJC00306AED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.