This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm +0.10 0.40 0.05 +0.10 0.16 0.06 Features 3 High forward current transfer ratio h FE Low collector-emitter saturation voltage V CE(sat) High emitter-base voltage (Collector open) V EBO 1 2 Low noise voltage NV (0.95) (0.95) Mini type package, allowing downsizing of the equipment and 1.90.1 automatic insertion through the tape packing and the magazine +0.20 2.90 0.05 packing 10 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit 1 : Base 2 : Emitter Collector-base voltage (Emitter open) V 50 V CBO 3 : Collector Collector-emitter voltage (Base open) V 40 V CEO EIAJ : SC-59 Mini3-G1 Package Emitter-base voltage (Collector open) V 15 V EBO Collector current I 50 mA C Marking symbol 1Z Peak collector current I 100 mA CP Collector power dissipation P 200 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 050 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 040 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 015 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 20 V, I = 01 A CEO CE B * Forward current transfer ratio h V = 10 V, I = 2 mA 400 2 000 FE CE C Collector-emitter saturation voltage V I = 10 mA, I = 1 mA 0.05 0.2 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA, f = 200 MHz 200 MHz T CB E Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R S T h 400 to 800 600 to 1 200 1 000 to 2 000 FE Publication date: January 2003 SJC00205BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1030 P T I V I V C a C CE C BE 240 160 120 V = 10 V CE T = 25C a 140 25C 200 100 T = 75C 25C a 120 I = 100 A B 160 80 90 A 100 80 A 70 A 120 80 60 60 A 50 A 60 40 A 80 40 30 A 40 20 A 40 20 20 10 A 0 0 0 0 40 80 120 16001264 8 102 0 0.4 0.8 1.2 1.6 2.0 ( ) Ambient temperature T C Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE V I h I f I CE(sat) C FE C T E 250 100 1800 V = 10 V CB I / I = 10 C B V = 10 V CE T = 25C a 1500 200 10 1200 150 T = 75C a 1 900 25C 100 25C 600 T = 75C a 25C 0.1 50 300 25C 0 0.01 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 ( ) Emitter current I mA Collector current I (mA) Collector current I (mA) E C C C V ob CB 8 I = 0 E f = 1 MHz T = 25C a 6 4 2 0 1 10 100 Collector-base voltage V (V) CB 2 SJC00205BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.