X-On Electronics has gained recognition as a prominent supplier of 2SD16450R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD16450R Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD16450R Panasonic

2SD16450R electronic component of Panasonic
2SD16450R Panasonic
2SD16450R Bipolar Transistors - BJT
2SD16450R  Semiconductors

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See Product Specifications
Part No. 2SD16450R
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS NPN DARL 60V 1A TO-126
Datasheet: 2SD16450R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Obsolete
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0
MOQ : 1
Multiples : 1
1 : USD 0.7935
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Obsolete
   
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RoHS - XON
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We are delighted to provide the 2SD16450R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD16450R and other electronic components in the Bipolar Transistors - BJT category and beyond.

Image Part-Description
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Stock Image 2SD1819ARL
TRANS NPN 50V 0.1A SMINI 3P
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image 2SD1819ASL
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A 75MHz 25 W Through Hole TO-220F
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

This product complies with the RoHS Directive (EU 2002/95/EC). Powor Transistors 2SD1645 Silicon NPN epitaxial planar type darlington For low frequency amplication Features Package Built-in zener diode (60 V) between collector-base and collector-emitter Code Small variation in withstand pressure TO-126B-A1 Darlington connection Pin Name Extremely satisfactory linearity of the forward current transfer ratio h 1. Emitter FE 2. Collector 3. Base Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Internal Connection Collector-base voltage (Emitter open) V 6010 V CBO C Collector-emitter voltage (Base open) V 6010 V CEO Emitter-base voltage (Collector open) V 5 V EBO B Collector current I 1.0 A C Peak collector current I 1.5 A CP E 1.2 Collector power dissipation P W C * 5.0 Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Note) : With a 100 mm 100 mm 2 mm Al heat sink at T = 25C * a Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 100 mA, I = 0 50 70 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 50 70 V CEO C B Emitter-base voltage (Collector open) V I = 100 mA, I = 0 5 V EBO E C Collector-base cutoff current (Emitter open) I V = 25 V, I = 0 1 mA CBO CB E Emitter-base cutoff current (Collector open) I V = 4 V, I = 0 1 mA EBO EB C 1 2 * * Forward current transfer ratio h V = 10 V, I = 1.0 A 4 000 40 000 FE CE C 1 * Collector-emitter saturation voltage V I = 1.0 A, I = 1.0 mA 1.8 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 1.0 A, I = 1.0 mA 2.2 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 150 MHz T CB E Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classication * Rank Q R S h 4 000 to 10 000 8 000 to 12 000 16 000 to 40 000 FE Publication date : October 2008 SJD00349AED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1645 TO-126B-A1 Unit: mm +0.5 8.0 0.1 3.2 0.2 3.16 0.1 0.75 0.1 0.5 0.1 1.76 0.1 0.5 0.1 4.6 0.2 2.3 0.2 1 2 3 2 SJD00349AED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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