This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1824 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm +0.10 +0.1 0.15 0.3 0.0 0.05 Features 3 High forward current transfer ratio h FE Low collector-emitter saturation voltage V CE(sat) High emitter-base voltage (Collector open) V EBO S-Mini type package, allowing downsizing of the equipment 1 2 and automatic insertion through the tape packing and the maga- (0.65) (0.65) zine packing. 1.30.1 2.00.2 Absolute Maximum Ratings T = 25C a 10 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 100 V CBO 1: Base 2: Emitter Collector-emitter voltage (Base open) V 100 V CEO 3: Collector Emitter-base voltage (Collector open) V 15 V EIAJ: SC-70 EBO SMini3-G1 Package Collector current I 20 mA C Peak collector current I 50 mA Marking symbol: 1V CP Collector power dissipation P 150 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 100 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 100 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 015 V EBO E C Collector-base cutoff current (Emitter open) I V = 60 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 60 V, I = 01 A CEO CE B * Forward current transfer ratio h V = 10 V, I = 2 mA 400 1 200 FE CE C Collector-emitter saturation voltage V I = 10 mA, I = 1 mA 0.05 0.20 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA, f = 200 MHz 90 MHz T CB E Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R S h 400 to 800 600 to 1 200 FE Publication date: April 2003 SJC00230BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1824 P T I V I V C a C CE C BE 200 80 60 V = 10 V CE T = 25C a 25C 50 160 T = 75C 25C a 60 I = 100 A B 80 A 40 60 A 120 50 A 40 A 40 30 30 A 80 20 20 A 20 40 10 A 10 0 0 0 0 40 80 120 16001264 8 102 0 0.4 0.8 1.2 1.6 2.0 ( ) Collector-emitter voltage V (V) Base-emitter voltage V (V) Ambient temperature T C CE BE a V I h I f I CE(sat) C FE C T E 200 100 1 800 V = 10 V I / I = 10 CB C B V = 10 V CE T = 25C a 1 500 160 T = 75C a 10 1 200 25C 120 25C 1 900 80 600 T = 75C 25C a 0.1 40 25C 300 0 0.01 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 Emitter current I (mA) Collector current I (mA) Collector current I (mA) E C C C V NV I NV V ob CB C CE 100 100 6 V = 10 V CE I = 0 E G = 80 dB V f = 1 MHz R = 100 k g Function = FLAT T = 25C a 5 T = 25C a 80 80 R = 100 k g 4 60 60 22 k 3 22 k 40 40 5 k 5 k 2 20 20 I = 1 mA C 1 G = 80 dB V Function = FLAT T = 25C a 0 0 0 1 10 100 0.01 0.1 1 1 10 100 Collector current I (mA) Collector-emitter voltage V (V) Collector-base voltage V (V) C CE CB 2 SJC00230BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.