This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2134 Silicon NPN epitaxial planar type For low-frequency driver , high power amplification Unit: mm Complementary to 2SB1414 7.50.2 4.50.2 Features Excellent collector current I characteristics of forward current C 0.650.1 0.850.1 transfer ratio h 1.00.1 0.8 C 0.8 C FE High transition frequency f T 0.70.1 A complementary pair with 2SB1414, is optimum for the driver- 0.70.1 1.150.2 stage of a 60 W to 100 W output amplifier. 1.150.2 Absolute Maximum Ratings T = 25C a 0.50.1 0.40.1 Parameter Symbol Rating Unit 0.8 C 1 23 Collector-base voltage (Emitter open) V 150 V CBO 1: Emitter Collector-emitter voltage (Base open) V 150 V CEO 2: Collector 2.50.2 2.50.2 3: Base Emitter-base voltage (Collector open) V 5V EBO MT-3-A1 Package Collector current I 1A C Peak collector current I 1.5 A CP Collector power dissipation P 1.5 W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 100 A, I = 0 150 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 5 V EBO E C * Forward current transfer ratio h V = 10 V, I = 150 mA 90 220 FE1 CE C h V = 5 V, I = 500 mA 50 FE2 CE C Collector-emitter saturation voltage V I = 500 mA, I = 50 mA 0.5 2.0 V CE(sat) C B Base-emitter saturation voltage V I = 500 mA, I = 50 mA 1.0 2.0 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 20 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q R h 90 to 155 130 to 220 FE1 Publication date: February 2003 SJD00245BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2134 P T V I V I C a CE(sat) C BE(sat) C 2.0 10 10 I / I = 10 I / I = 10 Without heat sink C B C B 1.6 T = 25C C 1 1 1.2 100C T = 100C C 25C 0.8 25C 25C 0.1 0.1 0.4 0 0.01 0.01 0 40 80 120 160 0.01 0.1 1 0.01 0.1 1 Ambient temperature T (C) ( ) ( ) Collector current I A Collector current I A a C C h I f I C V FE C T E ob CB 1 000 400 100 V = 10 V CE I = 0 E V = 10 V CB f = 1 MHz f = 200 MHz T = 100C C T = 25C C T = 25C C 80 25C 300 100 25C 60 200 40 10 100 20 1 0 0 0.01 0.1 1 0.01 0.1 1 1 10 100 Collector current I (A) ( ) Emitter current I A Collector-base voltage V (V) C E CB Safe operation area R t th 4 10 10 Without heat sink Single pulse T = 25C C I CP 3 10 1 I C 2 10 t = 10 ms DC 0.1 10 0.01 1 1 10 0.001 4 3 2 1 2 3 4 10 10 10 10 1 10 10 10 10 1 10 100 1 000 ( ) Time t (s) Collector-emitter voltage V V CE SJD00245BED 2 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.