This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD2249 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 6.90.1 2.50.1 0.7 4.0 (0.8) Features Low collector-emitter saturation voltage V CE(sat) Satisfactory operation performances at high efficiency with the low- 0.65 max. voltage power supply. Allowing supply with the radial taping Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 40 V +0.10 +0.10 CBO 0.45 0.45 0.05 0.05 1.050.05 Collector-emitter voltage (Base open) V 20 V CEO 2.50.5 2.50.5 Emitter-base voltage (Collector open) V 7V EBO 1: Emitter Collector current I 5A C 2: Collector 123 3: Base Peak collector current I 8A CP MT-2-A1 Package * Collector power dissipation P 1W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg 2 Note) : Printed circuit board: Copper foil area of 1 cm or more, and the * board thickness of 1.7 mm for the collector portion Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 1 mA, I = 020 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 07 V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 0.1 A CBO CB E Emitter-base cutoff current (Collector open) I V = 7 V, I = 0 0.1 A EBO EB C 1 2 * * Forward current transfer ratio h V = 2 V, I = 0.5 A 230 600 FE1 CE C h V = 2 V, I = 2 A 150 FE2 CE C 1 * Collector-emitter saturation voltage V I = 3 A, I = 0.1 A 0.3 1.0 V CE(sat) C B 1 * Transition frequency f V = 6 V, I = 50 mA, f = 200 MHz 150 MHz T CB E Collector output capacitance C V = 20 V, I = 0, f = 1 MHz 50 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank R S h 230 to 380 340 to 600 FE1 Publication date: January 2003 SJC00253BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2249 P T I V I V C a C CE C BE 2.4 1.2 6 Copper plate at the collector T = 25C V = 2 V a CE 25C 2 is more than 1 cm in area, I = 7 mA T = 75C 25C 1.7 mm in thickness B a 2.0 1.0 5 6 mA 1.6 4 0.8 5 mA 4 mA 1.2 3 0.6 3 mA 0.8 2 0.4 2 mA 0.4 1 0.2 1 mA 0 0 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0.4 0.8 1.2 1.6 2.0 0 20 40 60 80 100 120 140 160 ( ) ( ) Collector-emitter voltage V V Base-emitter voltage V (V) Ambient temperature T C CE BE a V I V I h I CE(sat) C BE(sat) C FE C 600 10 100 I / I = 30 I / I = 30 C B C B V = 2 V CE 500 10 1 400 T = 75C a T = 75C 25C a 25C T = 25C 300 0.1 25C 1 a 25C 100C 25C 200 0.01 0.1 100 0 0.001 0.01 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 Collector current I (A) Collector current I (A) Collector current I (A) C C C f I C V T E ob CB 100 400 V = 6 V CB I = 0 E T = 25C a f = 1 MHz T = 25C a 80 300 60 200 40 100 20 0 0 0.01 0.1 1 10 1 10 100 ( ) ( ) Emitter current I A Collector-base voltage V V E CB 2 SJC00253BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.