This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.50.1 1.60.2 1.50.1 Features High collector-base voltage (Emitter open) V CBO High collector-emitter voltage (Base open) V CEO Large collector power dissipation P C 3 12 Low collector-emitter saturation voltage V CE(sat) 0.40.08 0.50.08 0.40.04 Mini Power type package, allowing downsizing of the equipment 1.50.1 and automatic insertion through the tape packing and the magazine 3 packing. 45 Absolute Maximum Ratings T = 25C a 3.00.15 Parameter Symbol Rating Unit 1 : Base Collector-base voltage (Emitter open) V 400 V CBO 2 : Collector Collector-emitter voltage (Base open) V 400 V CEO 3 : Emitter MiniP3-F1 Package Emitter-base voltage (Collector open) V 5V EBO Collector current I 100 mA C Marking Symbol: 1S Peak collector current I 200 mA CP * Collector power dissipation P 1W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg 2 Note) : Printed circuit board: Copper foil area of 1 cm or more, and the * board thickness of 1.7 mm for the collector portion Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 100 A, I = 0 400 V CBO C E Collector-emitter voltage (Base open) V I = 500 A, I = 0 400 V CEO C B Emitter-base voltage (Collector open) V I = 100 A, I = 05 V EBO E C Forward current transfer ratio h V = 5 V, I = 30 mA 30 FE CE C Collector-emitter saturation voltage V I = 50 mA, I = 5 mA 1.5 V CE(sat) C B Base-emitter saturation voltage V I = 50 mA, I = 5 mA 1.5 V BE(sat) C B * Transition frequency f V = 30 V, I = 20 mA, f = 200 MHz 40 MHz T CB E Collector output capacitance C V = 30 V, I = 0, f = 1 MHz 7 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Pulse measurement * Publication date: December 2002 SJC00260BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2413 P T I V V I C a C CE CE(sat) C 120 1.2 100 I / I = 10 Copper plate at the collector T = 25C C B a 2 is more than 1 cm in area, 1.7 mm in thickness 100 1.0 10 80 0.8 I = 1.0 mA B 0.9 mA 0.8 mA 60 0.6 1 0.7 mA T = 75C 0.6 mA a 0.5 mA 25C 0.4 mA 40 0.4 0.3 mA 25C 0.1 0.2 mA 20 0.2 0.1 mA 0 0 0.01 0 20 40 60 80 100 120 140 16001264 8 102 0.1 1 10 100 Collector-emitter voltage V (V) Ambient temperature T (C) Collector current I (mA) CE a C V I h I f I BE(sat) C FE C T E 100 180 60 I / I = 10 C B V = 5 V CE V = 30 V CB T = 25C a 150 50 10 120 40 25C T = 25C 1 a 90 30 75C 25C T = 75C a 60 20 0.1 25C 30 10 0.01 0 0 0.1 1 10 100 0.1 1 10 100 1 10 100 1 000 ( ) ( ) Collector current I mA Collector current I mA Emitter current I (mA) C C E C V ob CB 12 I = 0 E f = 1 MHz T = 25C a 10 8 6 4 2 0 10 100 1000 Collector-base voltage V (V) CB 2 SJC00260BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.