This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD2504 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 5.00.2 4.00.2 Features Low collector-emitter saturation voltage V CE(sat) Large collector current I C 0.70.1 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit +0.15 +0.15 0.45 0.45 Collector-base voltage (Emitter open) V 15 V 0.1 0.1 CBO +0.6 +0.6 2.5 2.5 0.2 0.2 Collector-emitter voltage (Base open) V 10 V CEO Emitter-base voltage (Collector open) V 10 V EBO 123 Collector current I 5A C 1 : Emitter * Peak collector current I 9A 2 : Collector CP 3 : Base Collector power dissipation P 750 mW C TO-92-B1 Package Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Note) : t = 380 s * Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 1 mA, I = 010 V CBO C E Collector-emitter voltage (Base open) V I = 10 A, I = 010 V CEO C B Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 5 V, I = 0 1.0 A CEO CE B Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 0.1 A EBO EB E * Forward current transfer ratio h V = 2 V, I = 0.5 A 300 800 FE1 CE C h V = 2 V, I = 2 A 195 FE2 CE C * Collector-emitter saturation voltage V I = 3 A, I = 0.1 A 0.28 0.50 V CE(sat) C B Transition frequency f V = 6 V, I = 50 mA, f = 200 MHz 170 MHz T CB E Collector output capacitance C V = 20 V, I = 0, f = 1 MHz 45 65 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Pulse measurement * Publication date: February 2003 SJC00267DED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2504 P T I V I V C a C CE C BE 800 4.0 1.2 T = 25C a V = 2 V CE I = 10 mA B 3.5 9 mA 1.0 8 mA 600 3.0 7 mA 0.8 2.5 6 mA 5 mA T = 85C 25C a 400 2.0 0.6 4 mA 25C 1.5 3 mA 0.4 200 1.0 2 mA 0.2 0.5 1 mA 0 0 0 0 40 80 120 160 01264 8 102 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ( ) Ambient temperature T C ( ) ( ) Collector-emitter voltage V V Base-emitter voltage V V a CE BE I I V I h I C B CE(sat) C FE C 0.5 10 800 I / I = 30 C B V = 2 V V = 2 V CE CE T = 25C a T = 85C a 700 0.4 1 600 25C T = 85C a 500 0.3 25C 25C 25C 400 0.1 0.2 300 0.01 200 0.1 100 0 0.001 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 0.001 0.01 0.1 1 10 100 ( ) Base current I mA ( ) ( ) Collector current I A Collector current I A B C C C V ob CB 1 000 f = 1 MHz T = 25C a 100 10 1 5 10 15 20 25 30 ( ) Collector-base voltage V V CB 2 SJC00267DED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.