This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD2321 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.00.2 2.00.2 Features Low collector-emitter saturation voltage V CE(sat) 0.75 max. Satisfactory operation performances at high efficiency with the low- voltage power supply Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit +0.20 0.45 Collector-base voltage (Emitter open) V 40 V 0.10 CBO +0.20 0.45 (2.5) (2.5) 0.10 Collector-emitter voltage (Base open) V 20 V CEO 0.70.1 Emitter-base voltage (Collector open) V 7V EBO 1 : Emitter Collector current I 5A C 2 : Collector 1 23 3 : Base Peak collector current I 8A CP NS-B1 Package Collector power dissipation P 400 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 1 mA, I = 020 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 07 V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 01 A CEO CB B Emitter-base cutoff current (Collector open) I V = 7 V, I = 0 0.1 A EBO EB C * Forward current transfer ratio h V = 2 V, I = 0.5 A 230 600 FE1 CE C h V = 2 V, I = 2 A 150 FE2 CE C Collector-emitter saturation voltage V I = 3 A, I = 0.1 A 0.28 1.00 V CE(sat) C B Transition frequency f V = 6 V, I = 50 mA, f = 200 MHz 150 MHz T CB E Collector output capacitance C V = 20 V, I = 0, f = 1 MHz 26 50 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q R h 230 to 380 340 to 600 FE1 Publication date: February 2003 SJC00256BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2321 P T I V I V C a C CE C BE 500 2.4 6 T = 25C V = 2 V a CE I = 7 mA B 2.0 5 400 6 mA T = 75C 25C a 1.6 4 5 mA 300 4 mA 25C 1.2 3 3 mA 200 0.8 2 2 mA 100 0.4 1 1 mA 0 0 0 0 40 80 120 160 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature T (C) Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE V I V I h I CE(sat) C BE(sat) C FE C 10 100 600 I / I = 30 I / I = 30 C B C B V = 2 V CE 500 T = 75C a 1 10 400 25C T = 75C a 25C 25C T = 25C a 0.1 1 300 25C 25C 75C 200 0.01 0.1 100 0.001 0.01 0 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 ( ) Collector current I A Collector current I (A) Collector current I (A) C C C f I C V Safe operation area T E ob CB 400 100 100 V = 6 V CB Single pulse I = 0 E T = 25C a T = 25C a f = 1 MHz T = 25C a 80 300 I 10 CP I C t = 10 ms 60 t = 1 s 200 1 40 100 0.1 20 0 0 0.01 0.01 0.1 1 10 1 10 100 0.1 1 10 100 ( ) Emitter current I A ( ) ( ) E Collector-base voltage V V Collector-emitter voltage V V CB CE 2 SJC00256BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.