X-On Electronics has gained recognition as a prominent supplier of 2SD22420PA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD22420PA Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD22420PA Panasonic

2SD22420PA electronic component of Panasonic
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Part No.2SD22420PA
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS NPN DARL 60V 4A MT-4
Datasheet: 2SD22420PA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.6829
10 : USD 1.4048
100 : USD 1.2765
500 : USD 1.2214
N/A

   
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RoHS - XON
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We are delighted to provide the 2SD22420PA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD22420PA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Power Transistors 2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification 10.00.2 5.00.1 1.00.2 Features High forward current transfer ratio h FE High-speed switching 1.20.1 C 1.0 Allowing supply with the radial taping 1.480.2 2.250.2 Absolute Maximum Ratings T = 25C C 0.650.1 0.650.1 Parameter Symbol Rating Unit 0.350.1 1.050.1 2SD2242 V 60 V Collector to base CBO 0.550.1 0.550.1 voltage 2SD2242A 80 2.50.2 2.50.2 2SD2242 V 60 V Collector to CEO 123 emitter voltage 2SD2242A 80 1: Base 2: Collector Emitter to base voltage V 5V EBO 3: Emitter Peak collector current I 8A CP MT-4-A1 Package Collector current I 4A C Internal Connection T = 25CP 15 W Collector power C C C dissipation T = 25C2 a Junction temperature T 150 C B j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C E C Parameter Symbol Conditions Min Typ Max Unit 2SD2242 I V = 60 V, I = 0 200 A Collector cutoff CBO CB E current 2SD2242A V = 80 V, I = 0 200 CB E 2SD2242 I V = 30 V, I = 0 500 A Collector cutoff CEO CE B current 2SD2242A V = 40 V, I = 0 500 CE B Emitter cutoff current I V = 5 V, I = 0 2 A EBO EB C 2SD2242 V I = 30 mA, I = 0 60 V Collector to emitter CEO C B voltage 2SD2242A 80 Forward current transfer ratio h V = 3 V, I = 0.5 A 1 000 FE1 CE C * h V = 3 V, I = 3 A 2 000 10 000 FE2 CE C Base to emitter voltage V V = 3 V, I = 3 A 2.5 V BE CE C Collector to emitter saturation voltage V I = 3 A, I = 12 mA 2 V CE(sat) C B I = 5 A, I = 20 mA 4 C B Transition frequency f V = 10 V, I = 0.5 A, f = 1 MHz 20 MHz T CE C Turn-on time t I = 3 A, I = 12 mA, I = 12 mA, 0.5 s on C B1 B2 Storage time t V = 50 V 4 s stg CC Fall time t 1 s f Note) : Rank classification * Rank Q R h 2 000 to 5 000 4 000 to 10 000 FE2 350 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. Power Transistors 2SD2242, 2SD2242A P T I V I V C a C CE C BE 20 10 10 T =25C V =3V C CE (1) T =Ta C (2) Without heat sink I =4.0mA (P =2.0W) B C 8 8 3.5mA 15 3.0mA 2.5mA (1) 25C 2.0mA 1.5mA 6 6 T =100C 25C C 1.0mA 10 0.5mA 4 4 5 2 2 (2) 0 0 0 0 20 40 60 80 100 120 140 16001264 80030.8 1.6 2.4.2 Ambient temperature T (C) Collector to emitter voltage V (V) Base to emitter voltage V (V) a CE BE V I h I C V CE(sat) C FE C ob CB 5 100 10 10000 I /I =250 V =3V I =0 C B CE E f=1MHz 30 3000 T =25C C T =100C C 4 10 10 1000 25C 25C 3 25C 300 T =100C C 3 1 10 100 25C 0.3 30 2 0.1 10 10 0.03 3 0.01 10 1 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 30 100 ( ) ( ) ( ) Collector current I A Collector current I A Collector to base voltage V V C C CB Area of safe operation (ASO) R t th(t) 100 1000 Non repetitive pulse Note: R was measured at Ta=25C and under natural convection. th (1) Without heat sink T =25C C 30 (2) With a 50 50 2mm Al heat sink I 10 CP 100 (1) t=1ms I C 10ms 3 (2) DC 1 10 0.3 0.1 1 0.03 0.01 0.1 3 2 1 2 3 4 1 3 10 30 100 300 1000 10 10 10 1 10 10 10 10 ( ) ( ) Collector to emitter voltage V V Time t s CE 351 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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