This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2139 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit: mm 10.00.2 5.00.1 1.00.2 Features High forward current transfer ratio h FE Satisfactory linearity of forward current transfer ratio h FE Allowing supply with the radial taping 1.20.1 C 1.0 1.480.2 Absolute Maximum Ratings T = 25C C 2.250.2 0.650.1 Parameter Symbol Rating Unit 0.650.1 0.350.1 Collector-base voltage (Emitter open) V 80 V CBO 1.050.1 0.550.1 0.550.1 Collector-emitter voltage (Base open) V 60 V CEO 2.50.2 2.50.2 Emitter-base voltage (Collector open) V 6V EBO 123 Collector current I 3A C 1: Base 2: Collector Peak collector current I 6A CP 3: Emitter Base current I 1A B MT-4-A1 Package Collector power dissipation P 15 W C T = 25C a 2.0 Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 25 mA, I = 0 60 V CEO C B Collector-base cutoff current (Emitter open) I V = 80 V, I = 0 100 A CBO CB E Collector-emitter cutoff current (Base open) I V = 40 V, I = 0 100 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 100 A EBO EB C * Forward current transfer ratio h V = 4 V, I = 0.5 A 500 2 500 FE CE C Collector-emitter saturation voltage V I = 2 A, I = 0.05 A 1.0 V CE(sat) C B Transition frequency f V = 12 V, I = 0.2 A, f = 10 MHz 50 MHz T CE C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q P O h 500 to 1 000 800 to 1 500 1 200 to 2 500 FE Publication date: March 2004 SJD00249BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2139 P T I V I V C a C CE C BE 20 1.2 6 IB=1.6mA T =25C C VCE=4V (1)TC=Ta 1.4mA (2)Without heat sink 1.2mA (P =2.0W) 1.0 5 C 1.0mA 15 (1) 0.8 0.8mA 4 0.6mA 10 0.6 3 T =100C C 0.4mA 0.4 2 25C 5 0.2mA 0.2 1 25C (2) 0 0 0 0 40 80 120 16001482 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature T (C) Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE V I h I f I CE(sat) C FE C T C 4 100 10 1 000 I /I =40 VCE=4V C B V =12V CE f=10MHz T =25C C T =100C 10 C T =100C C 3 100 10 25C 25C 1 25C 2 10 10 0.1 25C 0.01 10 1 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 Collector current I (A) Collector current I (A) Collector current I (A) C C C C V Safe operation area ob CB 1 000 100 Non repetitive pulse IE=0 T =25C C f=1MHz T =25C C 10 I CP 100 t=10ms t=1ms IC DC 1 10 0.1 1 0.01 1 10 100 1 10 100 1 000 Collector-base voltage V (V) Collector-emitter voltage V (V) CB CE SJD00249BED 2 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.