This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2064 Silicon NPN triple diffusion planar type Unit: mm 5.00.2 For high power amplification 15.00.3 (3.2) 11.00.2 Complementary to 2SB1371 3.20.1 Features Excellent collector current I characteristics of forward current C transfer ratio h FE 2.00.2 2.00.1 Wide safe operation area High transition frequency f T 1.10.1 0.60.2 Full-pcak package which can be installed to the heat sink with one screw 5.450.3 10.90.5 Absolute Maximum Ratings T = 25C C 1: Base 123 2: Collector Parameter Symbol Rating Unit 3: Emitter EIAJ: SC-92 Collector-base voltage (Emitter open) V 120 V CBO TOP-3F-A1 Package Collector-emitter voltage (Base open) V 120 V CEO Emitter-base voltage (Collector open) V 5V EBO Collector current I 6A C Peak collector current I 10 A CP Collector power dissipation P 70 W C T = 25C3 a Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C C Parameter Symbol Conditions Min Typ Max Unit Base-emitter voltage V V = 5 V, I = 4 A 1.8 V BE CE C Collector-base cutoff current (Emitter open) I V = 120 V, I = 050 A CBO CB E Emitter-base cutoff current (Collector open) I V = 3 V, I = 050 A EBO EB C Forward current transfer ratio h V = 5 V, I = 20 mA 20 FE1 CE C * h V = 5 V, I = 1 A 60 200 FE2 CE C h V = 5 V, I = 4 A 20 FE3 CE C Collector-emitter saturation voltage V I = 4 A, I = 0.4 A 2.0 V CE(sat) C B Transition frequency f V = 5 V, I = 0.5 A, f = 1 MHz 20 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 80 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q S P h 60 to 120 80 to 160 100 to 200 FE2 Publication date: September 2003 SJD00243BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2064 P T I V I V C a C CE C BE 80 12 12 (1)T =Ta C V =5V TC=25C CE (2)With a 1001002mm (1) Al heat sink (3)Without heat sink 10 10 IB=500mA 25C (PC=3W) TC=25C 60 400mA 100C 300mA 8 8 200mA 150mA 40 6 6 100mA 4 4 20 50mA (2) 2 2 10mA (3) 0 0 0 04132 0 40 80 120 16001482 Ambient temperature T (C) Base-emitter voltage V (V) Collector-emitter voltage V (V) a BE CE V I h I f I CE(sat) C FE C T C 1 100 000 1 000 VCE=5V IC/IB=10 VCE=5V f=1MHz T =25C C T =100C C 10 100 25C 100 25C TC=100C 1 25C 10 10 25C 0.1 1 1 0.01 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 Collector current I (A) Collector current I (A) Collector current I (A) C C C C V Safe operation area ob CB 1 000 100 Non repetitive pulse I =0 E TC=25C f=1MHz TC=25C ICP 10 100 IC t=10ms t=100ms 1 DC 10 0.1 0.01 1 1 10 100 1 10 100 1 000 Collector-emitter voltage V (V) Collector-base voltage V (V) CE CB 2 SJD00243BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.