2SD21330RA Panasonic

This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2133 Silicon NPN epitaxial planar type For low-frequency power amplification driver Unit: mm 7.50.2 4.50.2 Features Low collector-emitter saturation voltage V CE(sat) 0.650.1 0.850.1 0.8 C 0.8 C 1.00.1 Absolute Maximum Ratings T = 25C 0.70.1 C 0.70.1 Parameter Symbol Rating Unit 1.150.2 1.150.2 Collector-base voltage (Emitter open) V 60 V CBO Collector-emitter voltage (Base open) V 50 V CEO 0.50.1 0.40.1 Emitter-base voltage (Collector open) V 5V EBO 0.8 C 1 23 Collector current I 1A C 1: Emitter Peak collector current I 1.5 A CP 2: Collector 2.50.2 2.50.2 Collector power dissipation P 1.5 W 3: Base C MT-3-A1 Package Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 5 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E 1, 2 * Forward current transfer ratio h V = 10 V, I = 0.5 A 85 340 FE1 CE C 1 * h V = 5 V, I = 1 A 50 100 FE2 CE C h V = 10 V, I = 1 mA 35 FE3 CE C Collector-emitter saturation voltage V I = 500 mA, I = 50 mA 0.2 0.4 V CE(sat) C B Base-emitter saturation voltage V I = 500 mA, I = 50 mA 0.85 1.20 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 11 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank Q R S h 85 to 170 120 to 240 170 to 340 FE1 Publication date: May 2003 SJD00244BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2133 P T I V I I C a C CE C B 1.2 1.2 2.0 Ta=25C Without heat sink VCE=10V Ta=25C 9mA IB=10mA 1.0 1.0 8mA 7mA 1.6 6mA 5mA 0.8 0.8 1.2 4mA 0.6 0.6 3mA 0.8 0.4 0.4 2mA 0.4 0.2 0.2 1mA 0 0 0 012148602 0 40 80 120 160012148602 Collector-emitter voltage V (V) Base current I (mA) Ambient temperature T (C) CE B a V I V I h I CE(sat) C BE(sat) C FE C 100 10 300 I /I =10 I /I =10 C B C B V =10V CE 250 1 10 200 Ta=75C Ta=25C Ta=25C 1 10 1 150 Ta=75C Ta=25C Ta=75C Ta=25C Ta=25C 100 Ta=25C 2 10 0.1 50 3 10 0.01 0 1 10 100 1 000 1 10 100 1 000 1 10 100 1 000 Collector current I (mA) Collector current I (mA) Collector current I (mA) C C C f I C V V R T E ob CB CER BE 100 200 30 IC=10mA IE=0 VCB=10V TC=25C f=1MHz f=200MHz Ta=25C TC=25C 25 80 160 20 60 120 15 40 80 10 20 40 5 0 0 0 0.1 1 10 100 1 10 100 1 10 100 Base-emitter resistance R (k ) Emitter current I (A) Collector-base voltage V (V) BE E CB 2 SJD00244BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.