X-On Electronics has gained recognition as a prominent supplier of 2SD1979GSL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD1979GSL Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD1979GSL Panasonic

2SD1979GSL electronic component of Panasonic
2SD1979GSL Panasonic
2SD1979GSL Bipolar Transistors - BJT
2SD1979GSL  Semiconductors

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See Product Specifications
Part No. 2SD1979GSL
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS NPN 20V 0.3A SMINI-3
Datasheet: 2SD1979GSL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.2
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.2635
10 : USD 0.2219
25 : USD 0.2087
100 : USD 0.189
500 : USD 0.18
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Brand
Factory Pack Quantity :
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We are delighted to provide the 2SD1979GSL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD1979GSL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1979G Silicon NPN epitaxial planar type For low frequency amplification For muting For DC-DC converter Features Package Low ON resistance R Code on High forward current transfer ratio h SMini3-F2 FE S-Mini type package, allowing downsizing of the equipment and Marking Symbol: 3W automatic insertion through the tape packing and the magazine Pin Name packing. 1: Base 2: Emitter 3: Collector Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 50 V CBO Collector-emitter voltage (Base open) V 20 V CEO Emitter-base voltage (Collector open) V 25 V EBO Collector current I 300 mA C Peak collector current I 500 mA CP Collector power dissipation P 150 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 1 mA, I = 020 V CEO C B Base-emitter voltage V V = 2 V, I = 4 mA 0.6 V BE CE C Collector-base cutoff current (Emitter open) I V = 50 V, I = 01 A CBO CB E Emitter-base cutoff current (Collector open) I V = 25 V, I = 01 A EBO EB C 1 * Forward current transfer ratio h V = 2 V, I = 4 mA 500 2 500 FE CE C Collector-emitter saturation voltage V I = 30 mA, I = 3 mA 0.1 V CE(sat) C B Transition frequency f V = 6 V, I = 4 mA, f = 200 MHz 80 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 4.5 pF ob CB E (Common base, input open circuited) 2 * 1 ON resistance R on Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Rank classification 2: R Measuremet circuit * * on 1 k Rank S T I = 5 mA B h 500 to 1 500 800 to 2 500 FE f = 1 kHz V = 0.3 V V V V B V A V B R = 1 000 ( ) on V V A B Publication date: May 2007 SJC00377AED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1979G P T I V I V C a C CE C BE 200 24 120 T = 25C a V = 2 V CE 25C 20 100 160 25C T = 75C a I = 10 A B 9 A 16 80 8 A 120 7 A 12 60 6 A 80 5 A 8 40 4 A 3 A 40 2 A 4 20 1 A 0 0 0 0 40 80 120 16001264 8 102 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature T (C) Collector-emitter voltage V (V) ( ) Base-emitter voltage V V a CE BE V I h I f I CE(sat) C FE C T E 120 10 2 400 I / I = 10 C B V = 2 V CE V = 6 V CB T = 25C a 2 000 100 1 1 600 80 T = 75C a 25C 0.1 1 200 60 25C T = 75C a 25C 800 40 25C 0.01 400 20 0.001 0 0 0.1 1 10 100 1 10 100 1 000 1 10 100 ( ) ( ) ( ) Collector current I mA Collector current I mA Emitter current I mA C C E C V ob CB 12 f = 1 MHz I = 0 E T = 25C a 10 8 6 4 2 0 1 10 100 Collector-base voltage V (V) CB 2 SJC00377AED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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