X-On Electronics has gained recognition as a prominent supplier of 2SD1991ARA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD1991ARA Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD1991ARA Panasonic

2SD1991ARA electronic component of Panasonic
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Part No.2SD1991ARA
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS NPN 50V 0.1A MT-1
Datasheet: 2SD1991ARA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.1841
10 : USD 0.1588
25 : USD 0.1274
100 : USD 0.099
250 : USD 0.0963
500 : USD 0.0934
1000 : USD 0.0849
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD1991ARA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD1991ARA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Unit: mm Complementary to 2SB1320A 6.90.1 2.50.1 (0.7) (4.0) (0.8) Features 0.65 max. High forward current transfer ratio h FE Low collector-emitter saturation voltage V CE(sat) Allowing supply with the radial taping Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit +0.10 +0.10 0.45 0.45 0.05 Collector-base voltage (Emitter open) V 60 V 0.05 CBO 1.050.05 Collector-emitter voltage (Base open) V 50 V CEO 2.50.5 2.50.5 Emitter-base voltage (Collector open) V 7V EBO 1: Emitter 2: Collector Collector current I 100 mA C 123 3: Base Peak collector current I 200 mA CP MT-1-A1 Package Collector power dissipation P 400 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 060 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 050 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 07 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 01 A CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 01 A CEO CE B * Forward current transfer ratio h V = 10 V, I = 2 mA 160 460 FE1 CE C h V = 2 V, I = 100 mA 90 FE2 CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.1 0.3 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA, f = 200 MHz 150 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 3.5 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q R S No rank h 160 to 260 210 to 340 290 to 460 160 to 460 FE1 Product of no-rank classification is not marked. Publication date: April 2003 SJC00234BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1991A P T I V I V C a C CE B BE 60 1200 500 T = 25C a V = 10 V CE I = 160 A T = 25C B a 50 1000 400 140 A 40 800 120 A 300 100 A 30 600 80 A 200 60 A 20 400 40 A 100 10 200 20 A 0 0 0 01264 80 0 0.2 0.4 0.6 0.8 1.0 0 40 80 120 160 ( ) ( ) ( ) Collector-emitter voltage V V Base-emitter voltage V V Ambient temperature T C CE BE a I V I I V I C BE C B CE(sat) C 100 200 240 I / I = 10 C B V = 10 V CE V = 10 V CE T = 25C a 200 160 10 160 120 25C 120 1 T = 75C 25C a 80 80 25C 0.1 T = 75C a 40 40 25C 0 0 0.01 0 0.4 0.8 1.2 1.6 2.0 0 200 400 600 800 1 000 0.1 1 10 100 ( ) ( ) Base-emitter voltage V V Base current I (A) Collector current I mA BE B C h I h I f I FE C FE C T E 1000 600 300 V = 10 V V = 5 V CE CE V = 10 V CB T = 25C a 500 800 240 T = 75C 400 a 600 180 25C T = 125C a 300 25C 75C 400 120 25C 200 25C 200 60 100 0 0 0 0.1 1 10 100 0.1 1 10 100 1 000 0.1 1 10 100 Collector current I (mA) Collector current I (mA) ( ) C Emitter current I mA C E 2 SJC00234BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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