This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1979 Silicon NPN epitaxial planar type For low frequency amplification Unit: mm For muting +0.10 +0.1 0.3 0.15 0.05 0.0 For DC-DC converter 3 Features Low ON resistance R on 1 2 High forward current transfer ratio h FE S-Mini type package, allowing downsizing of the equipment and (0.65) (0.65) automatic insertion through the tape packing and the magazine 1.30.1 packing. 2.00.2 10 Absolute Maximum Ratings T = 25C a 1: Base Parameter Symbol Rating Unit 2: Emitter Collector-base voltage (Emitter open) V 50 V CBO 3: Collector EIAJ: SC-70 Collector-emitter voltage (Base open) V 20 V CEO SMini3-G1 Package Emitter-base voltage (Collector open) V 25 V EBO Marking symbol: 3W Collector current I 300 mA C Peak collector current I 500 mA CP Collector power dissipation P 150 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 1 mA, I = 020 V CEO C B Base-emitter voltage V V = 2 V, I = 4 mA 0.6 V BE CE C Collector-base cutoff current (Emitter open) I V = 50 V, I = 01 A CBO CB E Emitter-base cutoff current (Collector open) I V = 25 V, I = 01 A EBO EB C 1 * Forward current transfer ratio h V = 2 V, I = 4 mA 500 2 500 FE CE C Collector-emitter saturation voltage V I = 30 mA, I = 3 mA 0.1 V CE(sat) C B Transition frequency f V = 6 V, I = 4 mA, f = 200 MHz 80 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 4.5 pF ob CB E (Common base, input open circuited) 2 * 1 ON resistance R on Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Rank classification 2: R Measuremet circuit * * on 1 k Rank S T I = 5 mA B h 500 to 1 500 800 to 2 500 FE f = 1 kHz V = 0.3 V V V V B V A V B R = 1 000 ( ) on V V A B Publication date: March 2007 SJC00233CED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1979 P T I V I V C a C CE C BE 200 24 120 T = 25C a V = 2 V CE 25C 20 100 160 25C T = 75C a I = 10 A B 9 A 16 80 8 A 120 7 A 12 60 6 A 80 5 A 8 40 4 A 3 A 40 2 A 4 20 1 A 0 0 0 0 40 80 120 16001264 8 102 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature T (C) Collector-emitter voltage V (V) ( ) Base-emitter voltage V V a CE BE V I h I f I CE(sat) C FE C T E 120 10 2 400 I / I = 10 C B V = 2 V CE V = 6 V CB T = 25C a 2 000 100 1 1 600 80 T = 75C a 25C 0.1 1 200 60 25C T = 75C a 25C 800 40 25C 0.01 400 20 0.001 0 0 0.1 1 10 100 1 10 100 1 000 1 10 100 ( ) ( ) ( ) Collector current I mA Collector current I mA Emitter current I mA C C E C V ob CB 12 f = 1 MHz I = 0 E T = 25C a 10 8 6 4 2 0 1 10 100 Collector-base voltage V (V) CB 2 SJC00233CED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.