This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1295 Silicon NPN epitaxial planar type Unit: mm 6.50.1 For low-frequency output amplification 2.30.1 5.30.1 4.350.1 Complementary to 2SB0968 0.50.1 Features Possible to solder radiation fin directly to printed circuit board 1.00.1 Output of 4 W can be obtained by a complementary pair with 0.10.05 0.50.1 2SB0968 0.750.1 2.30.1 (5.3) 4.60.1 (4.35) (3.0) Absolute Maximum Ratings T = 25C C 123 Parameter Symbol Rating Unit 1: Base Collector-base voltage (Emitter open) V 50 V CBO 2: Collector Collector-emitter voltage (Base open) V 40 V 3: Emitter CEO EIAJ: SC-63 Emitter-base voltage (Collector open) V 5V EBO U-G2 Package Collector current I 1.5 A C Note) Self-supported type package is also prepared. Peak collector current I 3A CP Collector power dissipation P 10 W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emiter open) V I = 1 mA, I = 050 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 040 V CEO C B Collector-base cutoff current (Emitter open) I V = 20 V, I = 01 A CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 100 A CEO CE B Emiter-base cutoff current (Collector open) I V = 5 V, I = 010 A EBO EB C * Forward current transfer ratio h V = 5 V, I = 1 A 80 220 FE CE C Collector-emitter saturation voltage V I = 1.5 A, I = 0.15 A 1 V CE(sat) C B Base-emitter saturation voltage V I = 2 A, I = 0.2 A 1.5 V BE(sat) C B Transition frequency f V = 5 V, I = 0.5 A, f = 200 MHz 150 MHz T CE C Collector output capacitance C V = 20 V, I = 0, f = 1 MHz 35 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R S h 80 to 160 120 to 220 FE Publication date: September 2003 SJD00192AED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1295 P T I V V I C a C CE CE(sat) C 25 3.0 I =40mA B 35mA TC=25C IC/IB=10 TC=Ta 1 30mA 2.5 25mA 25C 20 20mA 2.0 T =100C C 1 25C 15 10 15mA 1.5 10mA 10 1.0 2 10 5mA 5 0.5 3 0 0 10 0 40 80 120 160 200 240012148602 0.01 0.1 1 Ambient temperature T (C) Collector-emitter voltage V (V) Collector current I (A) a CE C V I h I f I BE(sat) C FE C T E 240 V =5V CB VCE=5V IC/IB=10 f=10MHz 1 000 10 T =25C C 200 TC=100C 25C 160 TC=25C 25C 25C 100 1 120 100C 80 10 0.1 40 1 0 0.01 0.01 0.1 1 0.01 0.1 1 0.01 0.1 1 10 Collector current I (A) Emitter current I (A) Collector current I (A) C E C C V Safe operation area ob CB 120 10 IE=0 Single pulse f=1MHz T =25C C ICP TC=25C 100 I C t=10ms 1 t=100ms 80 1 60 10 40 2 10 20 3 0 10 1 10 100 1 000 0.1 110 1 000 Collector-base voltage V (V) Collector-emitter voltage V (V) CB CE 2 SJD00192AED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.