This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1450 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 4.00.2 2.00.2 Features Optimum for high-density mounting Allowing supply with the radial taping 0.75 max. Low collector-emitter saturation voltage V CE(sat) Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 25 V CBO Collector-emitter voltage (Base open) V 20 V CEO Emitter-base voltage (Collector open) V 12 V EBO +0.20 0.45 0.10 +0.20 0.45 Collector current I 0.5 A 0.10 (2.5) (2.5) C 0.70.1 Peak collector current I 1A CP 1: Emitter Collector power dissipation P 300 mW C 2: Collector 1 23 Junction temperature T 150 C j 3: Base NS-B1 Package Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 025 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 020 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 012 V EBO E C Collector-base cutoff current (Emitter open) I V = 25 V, I = 0 100 nA CBO CB E 1 2 * * Forward current transfer ratio h V = 2 V, I = 0.5 A 200 800 FE1 CE C h V = 2 V, I = 1 A 60 FE2 CE C 1 * Collector-emitter saturation voltage V I = 500 mA, I = 20 mA 0.13 0.40 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 500 mA, I = 20 mA 1.2 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 10 pF ob CB E (Common base, input open circuited) 3 * 0.6 ON resistance R on Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank R S T No rank h 200 to 350 300 to 500 400 to 800 200 to 800 FE1 3: R Measurement circuit * on 1 k I = 1 mA B f = 1 kHz V = 0.3 V V V V B V A V B Ron = 1 000 ( ) V V A B Publication date: April 2003 SJC00222BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1450 P T I V V I C a C CE CE(sat) C 2.4 100 500 I / I = 25 C B T = 25C a 2.0 400 10 1.6 I = 4.0 mA B 300 3.5 mA 1.2 1 3.0 mA 2.5 mA 2.0 mA T = 75C a 0.8 200 1.5 mA 25C 0.1 25C 1.0 mA 0.4 0.5 mA 100 0 0.01 01264 8 102 0.01 0.1 1 10 0 40 80 120 160 ( ) ( ) ( ) Collector-emitter voltage V V Collector current I A Ambient temperature T C CE C a V I h I f I BE(sat) C FE C T E 400 100 1200 I / I = 10 V = 10 V C B V = 2 V CB CE T = 25C a 1000 300 10 800 25C T = 75C a T = 25C a 1 600 200 25C 75C 25C 400 100 0.1 200 0.01 0 0 0.01 0.1 1 10 0.01 0.1 1 10 0.1 1 10 100 ( ) ( ) Collector current I A Collector current I (A) Emitter current I mA C C E C V NV I ob CB C 20 120 V = 10 V CE I = 0 E G = 80 dB V f = 1 MHz Function = FLAT T = 25C a 100 16 80 R = 100 k g 12 60 8 22 k 40 5 k 4 20 0 0 1 10 100 0.01 0.1 1 ( ) Collector-base voltage V V Collector current I (mA) CB C 2 SJC00222BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.