This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD0966 (2SD966) Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 5.90.2 4.90.2 For stroboscope Features Low collector-emitter saturation voltage V CE(sat) 0.70.1 Satisfactory operation performances at high efficiency with the low- voltage power supply. Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit +0.2 Collector-base voltage (Emitter open) V 40 V +0.2 0.45 CBO 0.1 0.45 0.1 Collector-emitter voltage (Base open) V 20 V (1.27) (1.27) CEO 1 : Emitter Emitter-base voltage (Collector open) V 7V EBO 2 : Collector 132 3 : Base Collector current I 5A C EIAJ : SC-51 2.540.15 Peak collector current I 8A CP TO-92L-A1 Package Collector power dissipation P 1W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 1 mA, I = 020 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 07 V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 0.1 A CBO CB E Emitter-base cutoff current (Collector open) I V = 7 V, I = 0 0.1 A EBO EB C 1 2 * * Forward current transfer ratio h V = 2 V, I = 0.5 A 180 600 FE1 CE C h V = 2 V, I = 2 A 150 FE CE C 1 * Collector-emitter saturation voltage V I = 3 A, I = 0.1 A 1 V CE(sat) C B Transition frequency f V = 6 V, I = 50 mA, f = 200 MHz 150 MHz T CB E Collector output capacitance C V = 20 V, I = 0, f = 1 MHz 50 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank P Q R h 180 to 270 230 to 380 340 to 600 FE1 Note) The part number in the parenthesis shows conventional part number. Publication date: April 2003 SJC00201BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD0966 P T I V I V C a C CE C BE 1.2 2.4 6 T = 25C V = 2 V a CE 25C I = 7 mA B 1.0 2.0 5 T = 75C a 25C 6 mA 0.8 1.6 4 5 mA 4 mA 0.6 1.2 3 3 mA 0.4 0.8 2 2 mA 0.2 0.4 1 1 mA 0 0 0 020.4 0.8 1.2 1.6.0 0 40 80 120 160 0 0.4 0.8 1.2 1.6 2.0 2.4 Ambient temperature T (C) Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE V I h I f I CE(sat) C FE C T E 400 10 600 I / I = 30 C B V = 6 V V = 2 V CB CE T = 25C a 500 300 1 T = 75C a 400 25C T = 75C a 25C 200 0.1 300 25C 25C 200 100 0.01 100 0 0.001 0 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 Emitter current I (A) Collector current I (A) Collector current I (A) E C C C V ob CB 100 I = 0 E f = 1 MHz T = 25C a 80 60 40 20 0 1 10 100 Collector current V (V) CB 2 SJC00201BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.