This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD0592 (2SD592) Silicon NPN epitaxial planar type For low frequency ampli cation Unit: mm Complementary to 2SB0621 (2SB621) 5.0 0.2 4. 00. 2 FFeeaattuurreess LLaarrggee ccoolllleeccttoorr ppoowweerr ddiissssiippaattiioonn PP C LLooww ccoolllleeccttoorr--eemmiitttteerr ssaattuurraattiioonn vvoollttaaggee VV CE(sat) 0.7 0.1 AAbbssoolluuttee MMaaxxiimmuumm RRaattiinnggss T == 2255C aaa Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 30 V CBO +0.1 5 +0.1 5 0.45 0.4 5 0.1 0.1 +0.6 +0.6 Collector-emitter voltage (Base open) V 25 V CEO 2. 5 2. 5 0.2 0.2 Emitter-base voltage (Collector open) V 5 V EBO 1 2 3 Collector current I 1 A C 1: Emitter Peak collector current I 1.5 A 2: Collector CP 3: Base Collector power dissipation P 750 mW C TO-92-B1 Package Junction temperature TTT 150 C jj Storage temperature TTT 55 to +150 C ssttgg EElleeccttrriiccaall CChhaarraacctteerriissttiiccss T == 2255C3C aaa Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I == 1100 A, I == 00 30 V CBO CCC EEE Collector-emitter voltage (Base open) V I == 22 mmAA,, II = 0 25 V CEO CCC B Emitter-base voltage (Collector open) V I == 1100 A, I == 00 5 V EBO EEE CCC Collector-base cutoff current (Emitter open) I V = 20 V, I == 00 0.1 A CBO CB EEE * hhh V == 1100 VV,, II == 550000 mmAA 85 340 FFEE11 CCCEEE CCC Forward current transfer ratio hhh V == 55 VV,, II == 11 AA 50 FFEE22 CCCEEE CCC Collector-emitter saturation voltage V I == 550000 mmAA,, II = 50 mA 0.2 0.4 V CE(sat) CCC B Base-emitter saturation voltage VVV I == 550000 mmAA,, II = 50 mA 0.85 1.2 V BBEE((ssaatt)) CCC B Collector output capacitance C V = 10 V, I == 00,, ff == 11 MMHHzz 20 pF ob CB EEE (Common base, input open circuited) Transition frequency fff V = 10 V, I == 5500 mmAA,, ff == 220000 MMHHzz 200 MHz TT CB EEE Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classi cation * Rank Q R S hhh 85 to 170 120 to 240 170 to 340 FFEE11 Note) The part number in the parenthesis shows conventional part number. Publication date: May 2006 SJC00344AED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD0592 P TTTT II VV II II C aaaa C CCCEEE C B 1.0 1.50 1.2 T = 25C a V = 10 V CE T = 25C a 1.25 1.0 0.8 I = 10 mA B 9 mA 8 mA 0.8 1.00 7 mA 0.6 6 mA 0.75 5 mA 0.6 4 mA 0.4 0.50 3 mA 0.4 2 mA 0.2 0.25 0.2 1 mA 0 0 0 0 40 80 120 160 0 2 4 6 8 10 0 2 4 6 8 10 12 ( ) ( ) ( ) Ambient temperature T C Collector-emitter voltage V V Base current I mA a CE B V II VVV II hhhh II CE(sat) C BBEE((ssaatt)) CCC FFEE C 10 600 100 I / I = 10 I / I = 10 C B V = 10 V C B CE 500 1 10 400 T = 75C a 25C 25C T = 25C 0.1 a 300 1 25C 75C T = 75C a 200 25C 0.01 0.1 25C 100 0.001 0 0.01 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 Collector current I (A) Collector current I (A) Collector current I (A) C C C fff II CC VV V RRRR TT EEE ob CB CER BBEE 200 50 120 I = 0 I = 10 mA E C V = 10 V CB 180 f = 1 MHz T = 25C T = 25C a a T = 25C 100 a 160 40 140 80 120 30 100 60 80 20 40 60 40 10 20 20 0 0 0 1 10 100 1 10 100 0.1 1 10 100 ( ) ( ) ( ) Emitter current I mA Collector-base voltage V V Base-emitter resistance R k E CB BE 2 SJC00344AED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.