X-On Electronics has gained recognition as a prominent supplier of 2SC58630QL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC58630QL Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC58630QL Panasonic

2SC58630QL electronic component of Panasonic
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Part No.2SC58630QL
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS NPN 300V 0.07A MINI-3
Datasheet: 2SC58630QL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1
Multiples : 1
1 : USD 0.3553
10 : USD 0.2961
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Multiples : 1
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Multiples : 1
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We are delighted to provide the 2SC58630QL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC58630QL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC5863 Silicon NPN epitaxial planar type Unit: mm For general amplification +0.10 0.40 0.05 +0.10 0.16 0.06 3 Features High collector-emitter voltage (Base open) V CEO 1 2 High transition frequency f T (0.95) (0.95) 1.90.1 +0.20 2.90 0.05 Absolute Maximum Ratings T = 25C 10 a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 300 V CBO 1: Base 2: Emitter Collector-emitter voltage (Base open) V 300 V CEO 3: Collector Emitter-base voltage (Collector open) V 7V EBO EIAJ: SC-59 Mini3-G1 Package Collector current I 70 mA C Peak collector current I 100 mA CP Marking Symbol: 7H Collector power dissipation P 200 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 100 A, I = 0 300 V CEO C B Emitter-base voltage (Collector open) V I = 1 A, I = 07 V EBO E C Collector-emitter cutoff current (Base open) I V = 120 V, I = 01 A CEO CE B * Forward current transfer ratio h V = 10 V, I = 5 mA 60 220 FE CE C Collector-emitter saturation voltage V I = 50 mA, I = 5 mA 1.2 V CE(sat) C B Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 10 pF ob CB E (Common base, input open circuited) Transition frequency f V = 10 V, I = 10 mA, f = 200 MHz 50 80 MHz T CB E Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q R h 60 to 150 100 to 220 FE Publication date: November 2002 SJC00290AED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC5863 P T I V I V C a C CE C BE 250 80 120 T = 25C a V = 10 V CE I = 1.0 mA B 0.9 mA 70 0.8 mA 100 0.7 mA 200 0.6 mA 60 T = 85C a 0.5 mA 80 0.3 mA 0.4 mA 50 150 0.2 mA 25C 25C 40 60 100 30 0.1 mA 40 20 50 20 10 0 0 0 0 20 40 60 80 100 120 140 160012148602 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-emitter voltage V (V) Ambient temperature T (C) Base-emitter voltage V (V) CE a BE V I h I C V CE(sat) C FE C ob CB 10 200 100 I / I = 10 f = 1 MHz C B V = 10 V T = 85C CE a T = 25C a 160 1 25C 120 T = 85C a 10 25C 80 25C 25C 0.1 40 0.01 0 1 0.1 1 10 100 1 000 1 10 100 0 10203040 Collector current I (mA) Collector current I (mA) C Collector-base voltage V (V) C CB 2 SJC00290AED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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