This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC5725 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm +0.10 0.40 0.05 +0.10 0.16 0.06 Features 3 Low collector-emitter saturation voltage V CE(sat) Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.95) (0.95) 1.90.1 +0.20 2.90 0.05 Absolute Maximum Ratings T = 25C a 10 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 20 V CBO Collector-emitter voltage (Base open) V 15 V 1: Base CEO 2: Emitter Emitter-base voltage (Collector open) V 5V EBO 3: Collector EIAJ: SC-59 Collector current I 2A C Mini3-G1 Package Peak collector current I 6A CP * Marking Symbol: 3C Collector power dissipation P 600 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Note) : Measure on the ceramic substrate at 15 mm 15 mm 0.6 mm * Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 020 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 015 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 05 V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 0.1 A CBO CB E * Forward current transfer ratio h V = 2 V, I = 100 mA 200 800 FE1 CE C h V = 2 V, I = 1.5 A 120 FE2 CE C * Collector-emitter saturation voltage V I = 0.5 A, I = 25 mA 40 100 mV CE(sat) C B I = 1.5 A, I = 30 mA 130 280 C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 280 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 15 25 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Pulse measurement * Publication date: January 2003 SJC00188CED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer s process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.