This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC5556 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm +0.10 0.40 0.05 +0.10 0.16 0.06 Features 3 Low noise figure NF High transition frequency f T Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine packing (0.95) (0.95) 1.90.1 +0.20 2.90 0.05 Absolute Maximum Ratings T = 25C a 10 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 15 V CBO Collector-emitter voltage (Base open) V 10 V 1: Base CEO 2: Emitter Emitter-base voltage (Collector open) V 2V EBO 3: Collector EIAJ: SC-59 Collector current I 80 mA C Mini3-G1 Package * Collector power dissipation P 300 mW C Marking Symbol: 3K Junction temperature T 150 C j Storage temperature T 55 to +150 C stg 2 Note) : Copper plate at the collector is more than 1 cm in area, 1.0 mm in thickness * Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 015 V CBO C E Collector-emitter voltage (Base open) V I = 100 A, I = 010 V CEO C B Collector-base cutoff current (Emitter open) I V = 10 V, I = 01 A CBO CB E Emitter-base cutoff current (Collector open) I V = 2 V, I = 01 A EBO EB C Forward current transfer ratio h V = 8 V, I = 20 mA 110 250 FE CE C Transition frequency f V = 8 V, I = 20 mA, f = 800 MHz 5 6 GHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 0.9 1.2 pF ob CB E (Common base, input open circuited) 2 Foward transfer gain S V = 8 V, I = 20 mA, f = 800 MHz 7.5 10.0 dB 21e CE C Maximum unilateral power gain G V = 8 V, I = 20 mA, f = 800 MHz 11.5 dB UM CE C Noise figure NF V = 8 V, I = 20 mA, f = 800 MHz 1.7 dB CE C Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: December 2002 SJC00278BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC5556 P T I V V I C a C CE CE(sat) C 90 350 1 T = 25C a I / I = 10 I = 600 A C B B 80 300 500 A 70 400 A 250 60 200 50 300 A T = 85C a 0.1 40 150 25C 200 A 30 100 25C 20 100 A 50 10 0 0.01 0 012148602 1 10 100 0 40 80 120 160 ( ) Collector-emitter voltage V V Collector current I (mA) ( ) Ambient temperature T C CE C a h I C V FE C ob CB 200 10 f = 1 MHz V = 8 V CE T = 25C a 180 T = 85C a 160 140 25C 120 100 1 25C 80 60 40 20 0 0.1 1 10 100 1 000 0152015205 Collector current I (mA) ( ) Collector-base voltage V V C CB 2 SJC00278BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.