X-On Electronics has gained recognition as a prominent supplier of 2SC39410RA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC39410RA Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC39410RA Panasonic

2SC39410RA electronic component of Panasonic
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See Product Specifications
Part No.2SC39410RA
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS NPN 300V 0.07A TO-92NL
Datasheet: 2SC39410RA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.6742
10 : USD 0.5687
25 : USD 0.4976
100 : USD 0.4266
250 : USD 0.3698
500 : USD 0.3129
1000 : USD 0.2418
N/A

Obsolete
0

Multiples : 1
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the 2SC39410RA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC39410RA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3941 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Unit: mm 5.00.2 4.00.2 For small TV video output Complementary to 2SA1858 Features 0.70.1 High collector-emitter voltage (Base open) V CEO High transition frequency f T Allowing supply with the radial taping Absolute Maximum Ratings T = 25C a +0.15 +0.2 0.45 Parameter Symbol Rating Unit 0.1 0.45 0.1 (1.27) (1.27) Collector-base voltage (Emitter open) V 300 V CBO Collector-emitter voltage (Base open) V 300 V CEO 1: Emitter 132 2: Collector Emitter-base voltage (Collector open) V 7V EBO 2.540.15 3: Base Collector current I 70 mA C TO-92NL-A1 Package Peak collector current I 100 mA CP Collector power dissipation P 1W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 100 A, I = 0 300 V CEO C B Emitter-base voltage (Collector open) V I = 1 A, I = 07 V EBO E C Collector-base cutoff current (Emitter open) I V = 100 V, I = 02 A CBO CB E * Forward current transfer ratio h V = 10 V, I = 5 mA 30 220 FE CE C Collector-emitter saturation voltage V I = 50 mA, I = 5 mA 1.2 V CE(sat) C B Transition frequency f V = 10 V, I = 10 mA, f = 200 MHz 50 80 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 4 8 pF ob CB E (Common base, input open circuited) Storage time t I = 100 mA, I = 10 mA, I = 0 2.5 s stg C B1 B2 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank P Q R h 30 to 100 60 to 150 100 to 220 FE Publication date: February 2003 SJC00151BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3941 P T I V I V C a C CE C BE 1.2 120 120 V = 10 V 1.8 mA T = 25C CE a 1.6 mA I = 2 mA 25C B 1.4 mA 1.0 100 100 1.2 mA 1.0 mA T = 75C a 25C 0.8 80 80 0.8 mA 0.6 mA 0.6 60 60 0.4 mA 0.4 40 40 0.2 mA 20 20 0.2 0 0 0 020.4 0.8 1.2 1.6.0 0 40 80 120 16001264 80 ( ) ( ) Collector-emitter voltage V (V) Base-emitter voltage V V Ambient temperature T C CE BE a I I V I I V C B CE(sat) C B BE 120 100 3.0 I / I = 10 C B V = 10 V CE V = 10 V CE T = 25C a T = 25C a 100 2.5 10 80 2.0 T = 75C 60 1 a 1.5 25C 40 1.0 25C 0.1 20 0.5 0 0.01 0 0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 ( ) Base current I mA Collector current I (mA) Base-emitter voltage V (V) B C BE h I f I C V FE C T E ob CB 10 360 160 V = 10 V V = 10 V I = 0 CE CB E T = 25C f = 1 MHz a T = 25C a 300 8 120 240 6 180 80 T = 75C a 4 25C 120 25C 40 2 60 0 0 0 0.1 1 10 100 110 100 1 10 100 Collector current I (mA) Collector-base voltage V (V) Emitter current I (mA) C CB E 2 SJC00151BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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