X-On Electronics has gained recognition as a prominent supplier of 2SC4467 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC4467 Bipolar Transistors - BJT are a product manufactured by Sanken. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC4467 Sanken

2SC4467 electronic component of Sanken
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See Product Specifications
Part No.2SC4467
Manufacturer: Sanken
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 120 V 8 A 20MHz 80 W Through Hole TO-3P
Datasheet: 2SC4467 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.2247 ea
Line Total: USD 7.22

Availability - 10
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 1
Multiples : 1
1 : USD 7.0024
3 : USD 6.4564
4 : USD 5.2552
10 : USD 4.9686

   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the 2SC4467 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC4467 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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With Infinite heatsink 10ms DC IB=10mA 2SC4467 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) Application : Audio and General Purpose n Absolute maximum ratings External Dimensions MT-100(TO3P) (Ta=25C) n Electrical Characteristics (Ta=25C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.4 4.8 15.6 VCBO ICBO VCB=160V 10max m A 2.00.1 160 V 9.6 VCEO 120 V IEBO VEB=6V 10max m A VEBO V(BR)CEO IC=50mA 120min V 6 V a 0.1 3.2 hFE 50min* IC 8 A VCE=4V, IC=3A b IB VCE(sat) IC=3A, IB=0.3A 1.5max V 3 A PC fT VCE=12V, IE=0.5A 20typ MHz 80(Tc=25C) W 2 Tj COB VCB=10V, f=1MHz 200typ pF 150 C 3 +0.2 +0.2 Tstg 55 to +150 C 1.05 -0.1 0.65 -0.1 * hFE Rank O(50to100), P(70to140), Y(90to180) 5.450.1 5.450.1 1.4 n Typical Switching Characteristics (Common Emitter) BEC Weight : Approx 6.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) () (A) (V) (V) (A) (A) (m s) (m s) (m s) a. Part No. b. Lot No. 10 10 5 0.4 0.32typ 40 4 0.4 0.13typ 3.50typ I C VCE Characteristics (Typical) VCE(sat) IB Characteristics (Typical) I C VBE Temperature Characteristics (Typical) (VCE=4V) 8 3 8 6 6 2 4 4 1 2 2 I C=8A 4A 2A 0 0 0 0132 4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 Collector-Emitter Voltage VCE(V) Base Current I B(A) Base-Emittor Voltage VBE(V) hFE IC Characteristics (Typical) hFE IC Temperature Characteristics (Typical) j-a t Characteristics (VCE=4V) (VCE=4V) 200 3 200 125C 100 100 25C 1 30C 50 50 0.5 20 20 0.3 1 10 100 1000 0.02 0.1 0.5 1 5 8 0.02 0.1 0.5 1 5 8 Time t(ms) Collector Current I C(A) Collector Current I C(A) f TIE Characteristics (Typical) Safe Operating Area (Single Pulse) PcTa Derating (VCE=12V) 80 40 20 10 30 60 5 20 40 1 0.5 10 20 Without Heatsink Natural Cooling Without Heatsink 3.5 0 0.1 0 0.02 0.1 1 8 5 50 100 200 10 0 25 50 75 100 125 150 Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(C) Emitter Current I E(A) 108 Typ Typ 20mA 100ms 50mA 75mA 100mA 150mA 200mA 125C (Case Temp) 25C (Case Temp) 350mA 30C (Case Temp) DC Current Gain hFE Collector Current I C(A) Cut-off Frequency f T(MH Z) DC Current Gain hFE Collector Current I C(A) Collector-Emitter Saturation Voltage VCE(sat)(V) Transient Thermal Resistance j-a(C/W) Maximum Power Dissipation P C(W) Collector Current I C(A) 0.3 20.0min 19.9 4.0max 4.0 2.0 1.8 5.00.2X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Sanken manufacturer: Other Similar products are found below : 2SA1294 2SA1386 2SA1386A 2SA1488 2SA1492 2SA1494 2SA1667 2SA1673 2SA1693 2SA1694 2SA1695 2SA1725 2SA1746 2SA1859 2SA1860 2SA1908 2SA1909 2SB1257 2SB1258 2SB1259 2SB1351 2SB1382 2SB1383 2SB1559 2SB1560 2SC2837 2SC2921 2SC3519 2SC3835 2SC3851 2SC3851A 2SC3852A 2SC3856 2SC4024 2SC4131 2SC4140 2SC4153 2SC4381 2SC4382 2SC4466 2SC4467 2SC4468 2SC4546 2SC4886 2SC5071 2SC5100 2SC6011 2SC6145 2SC6145A 2SD2014

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Sanken Electric
Sanken Electric Company, Ltd.

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