X-On Electronics has gained recognition as a prominent supplier of 2SC45620RL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC45620RL Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC45620RL Panasonic

2SC45620RL electronic component of Panasonic
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Part No.2SC45620RL
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS NPN 50V 0.05A SMINI-3
Datasheet: 2SC45620RL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.2739
N/A

0
MOQ : 1
Multiples : 1
1 : USD 0.3808
10 : USD 0.3163
100 : USD 0.2691
500 : USD 0.2641
N/A

   
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Product Category
RoHS - XON
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We are delighted to provide the 2SC45620RL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC45620RL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC4562 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm Complementary to 2SA1748 +0.10 +0.1 0.3 0.15 0.05 0.0 3 Features High transition frequency f T Small collector output capacitance (Common base, input open cir- 1 2 cuited) C ob (0.65) (0.65) S-Mini type package, allowing downsizing of the equipment 1.30.1 and automatic insertion through the tape packing 2.00.2 10 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit 1: Base Collector-base voltage (Emitter open) V 50 V CBO 2: Emitter Collector-emitter voltage (Base open) V 50 V CEO 3: Collector EIAJ: SC-70 Emitter-base voltage (Collector open) V 5V EBO SMini3-G1 Package Collector current I 50 mA C Marking Symbol: AM Collector power dissipation P 150 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 050 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 050 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 05 V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 100 A CEO CE B * Forward current transfer ratio h V = 10 V, I = 2 mA 200 500 FE CE C Collector-emitter saturation voltage V I = 10 mA, I = 1 mA 0.06 0.30 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA, f = 200 MHz 250 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 1.5 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q R h 200 to 400 250 to 500 FE Publication date: February 2003 SJC00159BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4562 P T I V I V C a C CE C BE 200 120 60 T = 25C a V = 10 V CE 25C 100 50 160 80 I = 300 A B 40 T = 75C a 120 250 A 60 30 200 A 25C 80 150 A 40 20 100 A 40 20 10 50 A 0 0 0 0 40 80 120 16001264 8 102 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature T (C) Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE V I h I f I CE(sat) C FE C T E 100 600 600 I / I = 10 C B V = 10 V CE V = 10 V CB T = 25C a 500 500 10 T = 75C a 400 400 25C 25C 1 300 300 200 T = 75C 200 a 25C 0.1 25C 100 100 0.01 0 0 1 10 100 1000 0.1 1 10 100 0.1 1 10 100 Collector current I (mA) Emitter current I (mA) C Collector current I (mA) E C C V ob CB 6 I = 0 E f = 1 MHz T = 25C a 5 4 3 2 1 0 1 10 100 ( ) Collector-base voltage V V CB 2 SJC00159BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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