This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC4410 Silicon NPN epitaxial planar type For UHF amplification Unit: mm +0.10 +0.1 0.15 0.3 0.0 0.05 Features 3 Allowing the small current and low voltage operation High transition frequency f T S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 2 packing (0.65) (0.65) 1.30.1 2.00.2 Absolute Maximum Ratings T = 25C a 10 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 10 V CBO Collector-emitter voltage (Base open) V 7V CEO 1: Base Emitter-base voltage (Collector open) V 2V EBO 2: Emitter 3: Collector Collector current I 10 mA C EIAJ: SC-70 SMini3-G1 Package Collector power dissipation P 50 mW C Marking Symbol: 2X Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base cutoff current (Emitter open) I V = 10 V, I = 01 A CBO CB E Emitter-base cutoff current (Collector open) I V = 1.5 V, I = 01 A EBO EB C Forward current transfer ratio h V = 1 V, I = 1 mA 50 200 FE CE C Transition frequency f V = 1 V, I = 1 mA, f = 0.8 GHz 4 GHz T CE C Collector output capacitance C V = 1 V, I = 0, f = 1 MHz 0.4 pF ob CB E (Common base, input open circuited) 2 Foward transfer gain S V = 1 V, I = 1 mA, f = 0.8 GHz 6.0 dB 21e CE C Maximum unilateral power gain G V = 1 V, I = 1 mA, f = 0.8 GHz 15 dB UM CE C Noise figure NF V = 1 V, I = 1 mA, f = 0.8 GHz 3.5 dB CE C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Handle the product with care because this is sensitive to the electrostatic breakdown by its structure Publication date: March 2004 SJC00155BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4410 P T I V I V C a C CE C BE 80 6 60 T = 25C V = 1 V a CE I = 50 A B 45 A 5 50 40 A 60 35 A 4 40 30 A 25C T = 75C 25C 25 A a 40 3 30 20 A 15 A 2 20 10 A 20 1 10 5 A 0 0 0 0 40 80 120 160 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature T (C) ( ) Collector-emitter voltage V V Base-emitter voltage V (V) a CE BE V I h I f I CE(sat) C FE C T C 100 240 12 I / I = 10 C B V = 1 V CE V = 1 V CE f = 800 MHz T = 25C a 200 10 10 160 8 T = 75C a 1 120 6 T = 75C a 25C 25C 80 4 25C 25C 0.1 40 2 0.01 0 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 Collector current I (mA) Collector current I (mA) Collector current I (mA) C C C C V G I NF I ob CB UM C C 1.2 24 6 I = 0 E V = 1 V CE V = 1 V CE f = 1 MHz f = 800 MHz (R = 50 ) g T = 25C a T = 25C a f = 800 MHz 1.0 20 5 T = 25C a 0.8 16 4 0.6 12 3 0.4 8 2 0.2 4 1 0 0 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 ( ) Collector-base voltage V V Collector current I (mA) Collector current I (mA) CB C C SJC00155BED 2 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.