This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Unit: mm 4.00.2 2.00.2 Complementary to 2SA1310 Features 0.75 max. Optimum for high-density mounting Allowing supply with the radial taping Low noise voltage NV Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit +0.20 0.45 0.10 Collector-base voltage (Emitter open) V 60 V +0.20 CBO 0.45 0.10 (2.5) (2.5) Collector-emitter voltage (Base open) V 55 V CEO 0.70.1 Emitter-base voltage (Collector open) V 7V EBO 1: Emitter 2: Collector Collector current I 100 mA C 1 23 3: Base Peak collector current I 200 mA CP NS-B1 Package Collector power dissipation P 300 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 060 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 055 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 07 V EBO E C Base-emitter voltage V V = 1 V, I = 30 mA 1 V BE CE C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 20 V, I = 01 A CEO CE B * Forward current transfer ratio h V = 5 V, I = 2 mA 180 700 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 1 V CE(sat) C B Transition frequency f V = 5 V, I = 2 mA, f = 200 MHz 200 MHz T CB E Noise voltage NV V = 10 V, I = 1 mA, G = 80 dB 150 mV CE C V R = 100 k , Function = FLAT g Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R S T h 180 to 360 260 to 520 360 to 700 FE Publication date: March 2003 SJC00128BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3312 P T I V I V C a C CE C BE 500 240 120 T = 25C a V = 5 V CE 25C T = 75C 25C a 200 100 400 160 80 I = 400 A 300 B 350 A 120 60 330 A 250 A 200 200 A 80 40 150 A 100 100 A 40 20 50 A 0 0 0 0 40 80 120 16001264 8 102 0 0.4 0.8 1.2 1.6 2.0 ( ) Ambient temperature T C Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE V I h I f I CE(sat) C FE C T E 100 1 000 400 I / I = 10 C B V = 5 V V = 5 V CB CE T = 25C a 800 10 300 600 1 200 T = 75C a 400 25C 25C T = 75C a 25C 0.1 100 200 25C 0.01 0 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 ( ) Collector current I (mA) Collector current I mA Emitter current I (mA) C C E C V NV I ob CB C 240 5 V = 10 V I = 0 CE E G = 80 dB f = 1 MHz V Function = FLAT T = 25C a 200 T = 25C 4 a 160 3 120 R = 100 k g 2 80 22 k 1 40 4.1 k 0 0 0.01 0.1 1 1 10 100 ( ) Collector current I (mA) Collector-base voltage V V C CB 2 SJC00128BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.