This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3704 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm +0.10 0.40 0.05 +0.10 0.16 0.06 Features 3 Low noise figure NF 2 High forward transfer gain S 21e High transition frequency f T 1 2 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine (0.95) (0.95) 1.90.1 packing +0.20 2.90 0.05 10 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 15 V CBO 1: Base 2: Emitter Collector-emitter voltage (Base open) V 10 V CEO 3: Collector Emitter-base voltage (Collector open) V 2V EIAJ: SC-59 EBO Mini3-G1 Package Collector current I 80 mA C Collector power dissipation P 200 mW Marking Symbol: 2W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base cutoff current (Emitter open) I V = 15 V, I = 01 A CBO CB E Emitter-base cutoff current (Collector open) I V = 1 V, I = 01 A EBO EB C Forward current transfer ratio h V = 8 V, I = 20 mA 50 150 300 FE1 CE C h V = 1 V, I = 3 mA 80 280 FE2 CE C Transition frequency f V = 8 V, I = 20 mA, f = 0.8 GHz 6 GHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 0.7 1.2 pF ob CB E (Common base, input open circuited) 2 Forward transfer gain S V = 8 V, I = 20 mA, f = 0.8 GHz 13 dB 21e CE C Maximum unilateral power gain G V = 8 V, I = 20 mA, f = 0.8 GHz 14 dB UM CE C Noise figure NF V = 8 V, I = 7 mA, f = 0.8 GHz 1.0 1.7 dB CE C Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: February 2003 SJC00134BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3704 P T I V I V C a C CE C BE 240 60 120 T = 25C V = 8 V I = 400 A a CE B 350 A 200 100 50 300 A 25C 160 80 40 250 A T = 75C 25C a 200 A 120 60 30 150 A 80 40 20 100 A 40 20 10 50 A 0 0 0 0 40 80 120 160 0 0.4 0.8 1.2 1.6 2.0 01264 8 102 Ambient temperature T (C) ( ) Base-emitter voltage V (V) Collector-emitter voltage V V a BE CE V I h I f I CE(sat) C FE C T C 100 600 12 I / I = 10 C B V = 8 V V = 8 V CE CE f = 0.8 GHz T = 25C a 500 10 10 400 8 T = 75C a 1 300 6 25C 200 4 T = 75C, 25C, 25C a 0.1 25C 100 2 0.01 0 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 Collector current I (mA) Collector current I (mA) Collector current I (mA) C C C C V G I NF I ob CB UM C C 2.4 24 6 I = 0 V = 8 V E CE V = 8 V CE f = 1 MHz f = 0.8 GHz (R = 50 ) g T = 25C T = 25C a a f = 800 MHz 2.0 20 5 T = 25C a 1.6 16 4 1.2 12 3 0.8 8 2 0.4 4 1 0 0 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 Collector-base voltage V (V) ( ) Collector current I (mA) Collector current I mA CB C C 2 SJC00134BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.