This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3707 Silicon NPN epitaxial planar type For UHF amplification Unit: mm +0.10 0.40 0.05 +0.10 0.16 0.06 Features 3 Possible with the small current and low voltage High transition frequency f T Mini type package, allowing downsizing of the equipment and au- 1 2 tomatic insertion through the tape packing and the magazine packing (0.95) (0.95) 1.90.1 +0.20 2.90 0.05 Absolute Maximum Ratings T = 25C a 10 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 10 V CBO Collector-emitter voltage (Base open) V 7V 1: Base CEO 2: Emitter Emitter-base voltage (Collector open) V 2V EBO 3: Collector EIAJ: SC-59 Collector current I 10 mA C Mini3-G1 Package Collector power dissipation P 50 mW C Marking Symbol: 2X Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base cutoff current (Emitter open) I V = 10 V, I = 01 A CBO CB E Emitter-base cutoff current (Collector open) I V = 1.5 V, I = 01 A EBO EB C Forward current transfer ratio h V = 1 V, I = 1 mA 50 150 FE CE C Transition frequency f V = 1 V, I = 1 mA, f = 0.8 GHz 4 GHz T CE C Collector output capacitance C V = 1 V, I = 0, f = 1 MHz 0.4 pF ob CB E (Common base, input open circuited) 2 Forward transfer gain S V = 1 V, I = 1 mA, f = 0.8 GHz 6.0 dB 21e CE C Maximum unilateral power gain G V = 1 V, I = 1 mA, f = 0.8 GHz 15 dB UM CE C Noise figure NF V = 1 V, I = 1 mA, f = 0.8 GHz 3.5 dB CE C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Handle the product with care because this is sensitive to the electrostatic breakdown by its structure Publication date: February 2003 SJC00135BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3707 P T I V I V C a C CE C BE 6 60 80 T = 25C V = 1 V a CE I = 50 A B 45 A 5 50 40 A 60 35 A 4 40 30 A 25C T = 75C 25C 25 A a 40 3 30 20 A 15 A 2 20 10 A 20 1 10 5 A 0 0 0 0 40 80 120 160 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature T (C) Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE V I h I f I CE(sat) C FE C T C 100 240 12 I / I = 10 C B V = 1 V V = 1 V CE CE f = 800 MHz T = 25C a 200 10 10 160 8 T = 75C a 1 120 6 T = 75C a 25C 25C 80 4 25C 25C 0.1 40 2 0.01 0 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 Collector current I (mA) Collector current I (mA) Collector current I (mA) C C C C V G I NF I ob CB UM C C 24 6 1.2 V = 1 V I = 0 CE E V = 1 V CE f = 800 MHz f = 1 MHz (R = 50 ) g T = 25C T = 25C a a f = 800 MHz 20 1.0 5 T = 25C a 16 0.8 4 12 0.6 3 8 0.4 2 4 0.2 1 0 0 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 Collector current I (mA) ( ) Collector-base voltage V (V) Collector current I mA C CB C 2 SJC00135BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.